NVMFS4C05N_16 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET

NVMFS4C05N
Power MOSFET
30 V, 127 A, Single N−Channel, SO−8 FL
Features
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• NVMFS4C05NWF − Wettable Flanks Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R_qJA
(Notes 1, 2 and 4)
V_DSS
30
V
V_GS
±20
V
T_A = 25°C
T_A = 80°C
I_D
27.2
A
21.6
Power Dissipation
R_qJA (Notes 1, 2
and 4)
T_A = 25°C
P_D
3.61 W
Continuous Drain
Current R_qJC
(Notes 1, 2, 3
and 4)
Steady
State
T_C = 25°C
Continuous Drain
Current R_qJC
(Notes 1, 2, 3
T_C = 80°C
I_D
and 4)
127
A
101
Power Dissipation
R_qJC (Notes 1, 2, 3
and 4)
T_C = 25°C
P_D
79
W
Pulsed Drain
Current
T_A = 25°C, t_p = 10 ms
I_DM
174
A
Operating Junction and Storage
Temperature
T_J,
T_STG
−55 to °C
+175
Source Current (Body Diode)
I_S
Single Pulse Drain−to−Source Avalanche
E_AS
Energy (T_J = 25°C, I_L = 29 A_pk, L = 0.1 mH)
72
A
42
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T_L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using 650 mm², 2 oz Cu pad.
3. Assumes heat−sink sufficiently large to maintain constant case temperature
independent of device power.
4. Continuous DC current rating. Maximum current for pulses as long as one
second is higher but dependent on pulse duration and duty cycle.
www.onsemi.com
V_(BR)DSS
30 V
R_DS(ON) MAX
2.8 mW @ 10 V
4.0 mW @ 4.5 V
D (5−8)
I_D MAX
127 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1
S
D
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
S 4C05xx
S AYWZZ
G
D
D
4C05N = Specific Device Code for
NVMFS4C05N
4C05WF= Specific Device Code of
NVMFS4C05NWF
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceabililty
ORDERING INFORMATION
Device
NVMFS4C05NT1G
Package
SO−8 FL
(Pb−Free)
Shipping^†
1500 /
Tape & Reel
NVMFS4C05NT3G
NVMFS4C05NWFT1G
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
1500 /
Tape & Reel
NVMFS4C05NWFT3G SO−8 FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
April, 2016 − Rev. 2
Publication Order Number:
NVMFS4C05N/D