NVMFS4C03N_16 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET

NVMFS4C03N
Power MOSFET
30 V, 1.7 mW, 159 A, Single N−Channel
Logic Level, SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R_DS(on) to Minimize Conduction Losses
• Low Q_G and Capacitance to Minimize Driver Losses
• NVMFS4C03NWF − Wettable Flanks Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
30
V
Gate−to−Source Voltage
V_GS
"20 V
Continuous Drain Cur-
T_C = 25°C
I_D
rent R_qJC (Notes 1, 2,
3)
Steady
State
Power Dissipation
T_C = 25°C
P_D
R_qJC (Notes 1, 2)
159
A
77
W
Continuous Drain Cur-
T_A = 25°C
I_D
34.9 A
rent R_qJA (Notes 1, 2,
3)
Steady
State
Power Dissipation
T_A = 25°C
P_D
3.71 W
R_qJA (Notes 1, 2)
Pulsed Drain Current T_A = 25°C, t_p = 10 ms
I_DM
900
A
Operating Junction and Storage Temperature
T_J, T_stg − 55 to °C
175
Source Current (Body Diode)
I_S
64
A
Single Pulse Drain−to−Source Avalanche
Energy (I_L(pk) = 11 A)
E_AS
549 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T_L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
Junction−to−Case − Steady State (Note 2)
R_qJC
1.95 °C/W
Junction−to−Ambient − Steady State (Note 2) R_qJA
40
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm², 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
www.onsemi.com
V_(BR)DSS
30 V
R_DS(on) MAX
1.7 mW @ 10 V
2.4 mW @ 4.5 V
D (5,6)
I_D MAX
159 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
S
D
S 4C03xx
S AYWZZ
G
D
D
4C03N = Specific Device Code for
NVMFS4C03N
4C03WF= Specific Device Code of
NVMFS4C03NWF
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceabililty
ORDERING INFORMATION
Device
NVMFS4C03NT1G
Package
SO−8 FL
(Pb−Free)
Shipping^†
1500 /
Tape & Reel
NVMFS4C03NT3G
NVMFS4C03NWFT1G
NVMFS4C03NWFT3G
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
1500 /
Tape & Reel
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
April, 2016 − Rev. 2
Publication Order Number:
NVMFS4C03N/D