NVLUS4C12N Datasheet, PDF (1/6 Pages) ON Semiconductor – Single N-Channel Power MOSFET

NVLUS4C12N
Power MOSFET
30 V, 10.7 A, Single N−Channel,
2.0x2.0x0.55 mm mCoolt UDFN6 Package
Features
• Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving with
Exposed Drain Pads for Excellent Thermal Conduction
• Ultra Low R_DS(on) to Reduce Conduction Losses
• Optimized Gate Charge to Reduce Switching Losses
• Low Capacitance to Minimize Driver Losses
• NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Power Load Switch
• Synch DC−DC Converters
• Wireless Charging Circuit
www.onsemi.com
V_(BR)DSS
30 V
MOSFET
R_DS(on) MAX
9 mW @ 10 V
12 mW @ 4.5 V
15 mW @ 3.7 V
19 mW @ 3.3 V
I_D MAX
10.7 A
D
G
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
V_DSS
30
V
Gate-to-Source Voltage
V_GS
±20
V
Continuous Drain Steady T_A = 25°C
I_D
Current (Note 1)
State
T_A = 85°C
10.7
A
7.7
t ≤ 5 s T_A = 25°C
15.1
Power Dissipa-
Steady T_A = 25°C
P_D
tion (Note 1)
State
1.54
W
t ≤ 5 s T_A = 25°C
3.1
Continuous Drain Steady T_A = 25°C
I_D
Current (Note 2)
State
T_A = 85°C
6.8
A
4.9
Power Dissipation (Note 2)
T_A = 25°C
P_D
0.63
W
Pulsed Drain Current
t_p = 10 ms
I_DM
43
A
MOSFET Operating Junction and Storage
Temperature
T_J,
-55 to °C
T_STG
150
Source Current (Body Diode) (Note 1)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_S
1.55
A
T_L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size,
2 oz. Cu.
© Semiconductor Components Industries, LLC, 2014
1
December, 2014 − Rev. 0
S
N−CHANNEL MOSFET
S
Pin 1
MARKING DIAGRAM
D
UDFN6
1
(mCOOL])
AGMG
CASE 517BG
G
AG = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
D1
D2
G3
D
S
(Top View)
6D
5D
4S
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NVLUS4C12N/D