NVGS4111P Datasheet, PDF (1/5 Pages) ON Semiconductor – Single P-Channel Power MOSFET

NVGS4111P
Product Preview
Power MOSFET
−30 V, −6.2 A, Single P−Channel, TSOP−6
Features
• Leading −30 V Trench Process for Low R_DS(on)
• Low Profile Package Suitable for Portable Applications
• Surface Mount TSOP−6 Package Saves Board Space
• Improved Efficiency for Battery Applications
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS
Compliant
Applications
• Battery Management and Switching
• Load Switching
• Battery Protection
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
−30
V
Gate−to−Source Voltage
V_GS
±20
V
Continuous Drain
Current (Note 1)
Steady T_A = 25°C
I_D
State
T_A = 85°C
−4.9
A
−3.8
t ≤ 5 s T_A = 25°C
−6.2
Power Dissipation
(Note 1)
Steady T_A = 25°C P_D
State
1.5
W
t ≤5 s
2.4
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady T_A = 25°C
I_D
State
T_A = 85°C
T_A = 25°C P_D
−3.5
A
−2.7
0.75 W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_DM
−19.6
A
T_J,
−55 to °C
T_STG
175
I_S
−1.25 A
T_L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Rating
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1) R_qJA
100 °C/W
Junction−to−Ambient – t ≤ 5 s (Note 1)
R_qJA
62.5
Junction−to−Ambient – Steady State (Note 2) R_qJA
200
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.006 in sq).
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2014
1
July, 2014 − Rev. P0
http://onsemi.com
V_(BR)DSS
−30 V
R_DS(on) TYP
38 mW @ −10 V
68 mW @ −4.5 V
I_D MAX
−6.2 A
P−Channel
1256
3
4
1
TSOP−6
CASE 318G
STYLE 1
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain Drain Source
654
VTG M G
G
123
Drain Drain Gate
VTG
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
NVGS4111PT1G TSOP−6 3000 / Tape& Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NVGS4111P/D