NVGS3441T1G Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET 1 Amp, 20 Volts, P−Channel TSOP−6

NTGS3441, NVGS3441
Power MOSFET
1 Amp, 20 Volts, P−Channel TSOP−6
Features
• Ultra Low R_DS(on)
• Higher Efficiency Extending Battery Life
• Miniature TSOP−6 Surface Mount Package
• NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Power Management in Portable and Battery−Powered Products,
i.e.: Cellular and Cordless Telephones, and PCMCIA Cards
http://onsemi.com
1 AMPERE
20 VOLTS
R_DS(on) = 90 mW
P−Channel
1256
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T_A = 25°C
Drain Current − Continuous @ T_A = 25°C
− Pulsed Drain Current (T_p t 10 mS)
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T_A = 25°C
Drain Current − Continuous @ T_A = 25°C
− Pulsed Drain Current (T_p t 10 mS)
Thermal Resistance
Junction−to−Ambient (Note 3)
Total Power Dissipation @ T_A = 25°C
Drain Current − Continuous @ T_A = 25°C
− Pulsed Drain Current (T_p t 10 mS)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes for 10 Seconds
V_DSS
−20
V
V_GS
"8.0
V
R_qJA
P_d
I_D
I_DM
244
0.5
−1.65
−10
°C/W
W
A
A
R_qJA
P_d
I_D
I_DM
128
1.0
−2.35
−14
°C/W
W
A
A
R_qJA
P_d
I_D
I_DM
T_J, T_stg
T_L
62.5
2.0
−3.3
−20
−55 to 150
260
°C/W
W
A
A
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR−4 or G−10 PCB, operating to steady state.
2. Mounted onto a 2″ square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single
sided), operating to steady state.
3. Mounted onto a 2″ square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single
sided), t t 5.0 seconds.
3
1
TSOP−6
CASE 318G
STYLE 1
4
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain Drain Source
654
PT MG
G
123
Drain Drain Gate
PT
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
NTGS3441T1G TSOP−6 3000 / Tape & Reel
(Pb−Free)
NVGS3441T1G TSOP−6 3000 / Tape& Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
1
October, 2012 − Rev. 6
Publication Order Number:
NTGS3441T1/D