NVGS3130N Datasheet, PDF (1/5 Pages) ON Semiconductor – Single N-Channel Power MOSFET

NVGS3130N
Product Preview
Power MOSFET
20 V, 5.9 A, Single N−Channel, TSOP−6
Features
• Leading Edge Trench Technology for Low On Resistance
• Low Gate Charge for Fast Switching
• Small Size (3 x 2.75 mm) TSOP−6 Package
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS
Compliant
Applications
• DC−DC Converters
• Lithium Ion Battery Applications
• Load/Power Switching
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
20
V
Gate−to−Source Voltage
V_GS
±8
V
Steady ^{TA = 25°C}
Continuous Drain Current
(Note 1)
State
T_A = 85°C
I_D
t ≤ 10 s T_A = 25°C
5.9
4.6
A
6.6
Power Dissipation
(Note 1)
Steady
State _{TA = 25°C}
P_D
t ≤ 10 s
1.4
W
1.7
Continuous Drain Current
T_A = 25°C
(Note 2)
Steady T_A = 85°C
I_D
Power Dissipation
(Note 2)
State
T_A = 25°C P_D
4.4
A
3.4
0.8 W
Pulsed Drain Current
t_P ≤ 10 s
Operating and Storage Temperature Range
I_DM
24
A
T_J, T_stg
−55 to
175
°C
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I_S
1.1
A
T_L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1)
110
Junction−to−Ambient − t ≤ 10 s (Note 1)
Junction−to−Ambient − Steady State (Note 2)
R_qJA
90
°C/W
200
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2014
1
July, 2014 − Rev. P0
http://onsemi.com
V_(BR)DSS
20 V
R_DS(on) mAX
24 mW @ 4.5 V
32 mW @ 2.5 V
N−Channel
Drain 1 2 5 6
I_D Max
5.9 A
5.2 A
Gate 3
Source 4
MARKING DIAGRAM &
PIN ASSIGNMENT
1
TSOP−6
CASE 318G
STYLE 1
Drain Drain Source
654
VS9 M G
G
123
Drain Drain Gate
VS9 = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
NVGS3130NT1G TSOP−6
(Pb−Free)
Shipping^†
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NVGS3130N/D