NVF2955PT1G Datasheet, PDF (1/5 Pages) ON Semiconductor – Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223

NTF2955, NVF2955,
NVF2955P
Power MOSFET
−60 V, −2.6 A, Single P−Channel SOT−223
Features
• Design for low R_DS(on)
• Withstands High Energy in Avalanche and Commutation Modes
• AEC−Q101 Qualified − NVF2955, NVF2955P
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Power Supplies
• PWM Motor Control
• Converters
• Power Management
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
−60
V
Gate−to−Source Voltage
V_GS
±20
V
Continuous Drain
Current (Note 1)
Steady T_A = 25°C
I_D
State
T_A = 85°C
−2.6 A
−2.0
Power Dissipation
(Note 1)
Steady T_A = 25°C P_D
State
2.3
W
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady T_A = 25°C
I_D
State
T_A = 85°C
T_A = 25°C P_D
−1.7 A
−1.3
1.0
W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Single Pulse Drain−to−Source Avalanche
Energy (V_DD = 25 V, V_G = 10 V, I_PK = 6.7 A,
L = 10 mH, R_G = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 seconds)
I_DM
−17
A
T_J, −55 to °C
T_STG
175
EAS 225 mJ
T_L
260 °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Tab (Drain) − Steady State (Note 2) R_qJC
14
Junction−to−Ambient − Steady State (Note 1)
R_qJA
65 °C/W
Junction−to−Ambient − Steady State (Note 2)
R_qJA
150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 in. pad size (Cu. area = 1.127
in² [1 oz] including traces)
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu. area = 0.341 in²)
© Semiconductor Components Industries, LLC, 2013
1
May, 2013 − Rev. 6
http://onsemi.com
V_(BR)DSS
−60 V
R_DS(on) TYP
145 mW @ −10 V
P−Channel
D
I_D MAX
−2.6 A
G
S
MARKING DIAGRAMS AND
PIN ASSIGNMENT
4 Drain
4
123
SOT−223
CASE 318E
STYLE 3
1
Gate
AYW
2955G
G
2
Drain
4 Drain
3
Source
AYW
2955PG
G
1
Gate
2
Drain
3
Source
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
NTF2955T1G
SOT−223 1000 /Tape & Reel
(Pb−Free)
NVF2955T1G
SOT−223 1000/ Tape & Reel
(Pb−Free)
NVF2955PT1G SOT−223 1000/ Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTF2955/D