NVD6495NL Datasheet, PDF (1/6 Pages) ON Semiconductor – N-Channel Power MOSFET

NVD6495NL
N-Channel Power MOSFET
100 V, 25 A, 50 mW, Logic
Level
Features
• Low R_DS(on)
• 100% Avalanche Tested
• AEC−Q101 Qualified
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
100
V
Gate−to−Source Voltage − Continuous
V_GS
$20
V
Continuous Drain
Steady T_C = 25°C
I_D
Current
State
T_C = 100°C
25
A
18
Power Dissipation
Steady T_C = 25°C
P_D
State
83
W
Pulsed Drain Current
t_p = 10 ms
Operating and Storage Temperature Range
I_DM
80
A
T_J, T_stg −55 to °C
+175
Source Current (Body Diode)
I_S
Single Pulse Drain−to−Source Avalanche
E_AS
Energy (V_DD = 50 Vdc, V_GS = 10 Vdc, I_L(pk) =
23 A, L = 0.3 mH, R_G = 25 W)
Lead Temperature for Soldering
T_L
Purposes, 1/8″ from Case for 10 Seconds
25
A
79
mJ
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain) − Steady State
R_qJC
Junction−to−Ambient − Steady State (Note 1) R_qJA
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
1.8 °C/W
39
http://onsemi.com
V_(BR)DSS
100 V
R_DS(on) MAX
54 mW @ 4.5 V
50 mW @ 10 V
D
I_D MAX
25 A
G
S
4
12
3
DPAK
CASE 369AA
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4 Drain
1
3
Gate ² Source
Drain
6495NL
Y
WW
G
= Device Code
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
September, 2014 − Rev. 2
Publication Order Number:
NVD6495NL/D