NVD5C684NL Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET

NVD5C684NL
Power MOSFET
60 V, 16.5 mW, 38 A, Single N−Channel
Features
• Low R_DS(on) to Minimize Conduction Losses
• Low Q_G and Capacitance to Minimize Driver Losses
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
60
V
Gate−to−Source Voltage
V_GS
"20 V
Continuous Drain Cur-
T_C = 25°C
I_D
rent R_qJC (Notes 1 & 3) _{Steady TC = 100°C}
Power Dissipation R_qJC ^State T_C = 25°C
P_D
(Note 1)
T_C = 100°C
38
A
27
27
W
13
Continuous Drain Cur-
T_A = 25°C
I_D
rent R_qJA (Notes 1, 2 &
3)
Steady ^{TA = 100°C}
Power Dissipation R_qJA ^State T_A = 25°C
P_D
(Notes 1 & 2)
T_A = 100°C
13
A
9.0
3.0
W
1.5
Pulsed Drain Current T_A = 25°C, t_p = 10 ms I_DM
130
A
Operating Junction and Storage Temperature
T_J, T_stg − 55 to °C
175
Source Current (Body Diode)
I_S
28
A
Single Pulse Drain−to−Source Avalanche
Energy (T_J = 25°C, I_L(pk) = 2.0 A)
E_AS
93
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T_L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case (Drain) (Note 1)
R_qJC
5.6 °C/W
Junction−to−Ambient − Steady State (Note 2) R_qJA
50
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm², 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
www.onsemi.com
V_(BR)DSS
60 V
R_DS(on)
16.5 mW @ 10 V
24.3 mW @ 4.5 V
D
I_D
38 A
G
S
N−CHANNEL MOSFET
4
12
3
DPAK
CASE 369C
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
2
1 ^Drain 3
Gate Source
A
= Assembly Location
Y
= Year
WW = Work Week
5C684L = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
January, 2017 − Rev. 0
Publication Order Number:
NVD5C684NL/D