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NVD5862N_15 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET | |||
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NVD5862N
Power MOSFET
60 V, 5.7 mW, 98 A, Single NâChannel
Features
⢠Low RDS(on) to Minimize Conduction Losses
⢠High Current Capability
⢠Avalanche Energy Specified
⢠AECâQ101 Qualified and PPAP Capable
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
VDSS
60
V
GateâtoâSource Voltage
VGS
"20 V
Continuous Drain Cur-
TC = 25°C
ID
rent RqJC (Note 1)
Steady TC = 100°C
Power Dissipation RqJC State TC = 25°C
PD
(Note 1)
TC = 100°C
98
A
69
115 W
58
Continuous Drain Cur-
TA = 25°C
ID
rent RqJA (Notes 1 & 2) Steady TA = 100°C
Power Dissipation RqJA State TA = 25°C
PD
(Notes 1 & 2)
TA = 100°C
18
A
13
4.1
W
2.0
Pulsed Drain Current TA = 25°C, tp = 10 ms IDM
367
A
Current Limited by
Package (Note 3)
TA = 25°C
IDmaxpkg
60
A
Operating Junction and Storage Temperature
TJ, Tstg â 55 to °C
175
Source Current (Body Diode)
IS
96
A
Single Pulse DrainâtoâSource Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 37 A, L = 0.3 mH, RG = 25 W)
EAS
205 mJ
Lead Temperature for Soldering Purposes
(1/8â³ from case for 10 s)
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctionâtoâCase â Steady State (Drain)
RqJC
1.3 °C/W
JunctionâtoâAmbient â Steady State (Note 2) RqJA
37
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surfaceâmounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Continuous DC current rating. Maximum current for pulses as long as 1
second are higher but are dependent on pulse duration and duty cycle.
www.onsemi.com
V(BR)DSS
60 V
RDS(on)
5.7 mW @ 10 V
ID
98 A
D
NâChannel
G
S
4
12
3
DPAK
CASE 369C
(Surface Mount)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
Y
= Year
WW = Work Week
V5862N = Device Code
G
= PbâFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
June, 2015 â Rev. 2
Publication Order Number:
NVD5862N/D
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