NVD4C05N Datasheet, PDF (1/3 Pages) ON Semiconductor – Single N−Channel Power MOSFET

NVD4C05N
Product Preview
Power MOSFET
30 V, 4.1 mW, 90 A, Single N−Channel
Features
• Low R_DS(on) to Minimize Conduction Losses
• Low Q_G and Capacitance to Minimize Driver Losses
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
30
V
Gate−to−Source Voltage
V_GS
"20 V
Continuous Drain Cur-
T_C = 25°C
I_D
rent R_qJC (Notes 1 & 3) _{Steady TC = 100°C}
Power Dissipation R_qJC ^State T_C = 25°C
P_D
(Note 1)
T_C = 100°C
90
A
64
57
W
28
Continuous Drain Cur-
T_A = 25°C
I_D
rent R_qJA (Notes 1, 2 &
3)
Steady ^{TA = 100°C}
Power Dissipation R_qJA ^State T_A = 25°C
P_D
(Notes 1 & 2)
T_A = 100°C
22
A
16
3.5
W
1.7
Pulsed Drain Current T_A = 25°C, t_p = 10 ms I_DM
270
A
Operating Junction and Storage Temperature
T_J, T_stg − 55 to °C
175
Source Current (Body Diode)
I_S
75
A
Single Pulse Drain−to−Source Avalanche
Energy (T_J = 25°C, I_L(pk) = 5.6 A, L = 10 mH)
E_AS
157 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T_L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case (Drain) (Note 1)
R_qJC
2.65 °C/W
Junction−to−Ambient − Steady State (Note 2) R_qJA
43
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm², 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
www.onsemi.com
V_(BR)DSS
30 V
R_DS(on)
4.1 mW @ 10 V
6.0 mW @ 4.5 V
D
I_D
90 A
G
S
N−CHANNEL MOSFET
4
12
3
DPAK
CASE 369C
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
2
1 ^Drain 3
Gate Source
A
= Assembly Location
Y
= Year
WW = Work Week
4C05N = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
May, 2015 − Rev. P1
Publication Order Number:
NVD4C05N/D