NVC6S5A354PLZ Datasheet, PDF (1/6 Pages) ON Semiconductor – P-Channel Power MOSFET

NVC6S5A354PLZ
Power MOSFET
60V, 100mΩ, 4A, P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and low
on resistance. This device is suitable for applications with low gate charge
driving or low on resistance requirements.
Features
 4V drive
 High ESD protection
 Low On-Resistance
 Pb-Free, Halogen Free and RoHS compliance
Typical Applications
 Reverse Battery Protection
 High Side Load Switch
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
20
V
Drain Current (DC) (Note 2)
Drain Current (DC) (Note 3)
ID
4
A
3
A
Drain Current (Pulse)
PW  10s, duty cycle  1%
IDP
16
A
Power Dissipation
Ta=25C(Note 2)
Power Dissipation
Ta=25C(Note 3)
1.9
W
PD
0.9
W
Junction Temperature and
Storage Temperature
Tj, Tstg
55 to +175 C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
(Note 2)
78.1
Junction to Ambient
R_JA
(Note 3)
160
Note 2 : Surface mounted on ceramic substrate(1500mm²  0.8mm).
Note 3 : Surface mounted on FR4 board using a 92mm², 1 oz. Cu pad.
Unit
C/W
C/W
www.onsemi.com
VDSS
60V
RDS(on) Max
100mΩ@ 10V
135mΩ@ 4.5V
145mΩ@ 4.0V
ID _Max
4A
ELECTRICAL CONNECTION
P-Channel
1, 2, 5, 6
1 : Drain
3
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
4
654
12 ₃
CPH6
MARKING
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
December 2015 - Rev. 0
Publication Order Number :
NVC6S5A354PLZ/D