NVC3S5A51PLZ_16 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET

NVC3S5A51PLZ
Power MOSFET
60V, 250mΩ, 1.8A, P-Channel
Automotive Power MOSFET designed to minimize gate charge and low on
resistance. AEC-Q101 qualified MOSFET and PPAP capable suitable for
automotive applications.
Features
 4V drive
 High ESD protection
 Low On-Resistance
 AEC-Q101 qualified and PPAP capable
 Pb-Free, Halogen Free and RoHS compliance
Typical Applications
 Reverse Battery Protection
 High Side Load Switch
 Automotive Body Controllers
www.onsemi.com
VDSS
60V
RDS(on) Max
250mΩ@ 10V
330mΩ@ 4.5V
350mΩ@ 4.0V
ID _Max
1.8A
ELECTRICAL CONNECTION
P-Channel
3
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
20
V
Drain Current (DC) (Note 2)
Drain Current (DC) (Note 3)
ID
1.8
A
1.7
A
Drain Current (Pulse)
PW  10s, duty cycle  1%
IDP
7.2
A
Power Dissipation
Ta=25C(Note 2)
Power Dissipation
Ta=25C(Note 3)
1.2
W
PD
0.8
W
Junction Temperature and
Storage Temperature
Tj, Tstg
55 to +175 C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
(Note 2)
125
Junction to Ambient
R_JA
(Note 3)
182
Note 2 : Surface mounted on ceramic substrate(900mm²  0.8mm).
Note 3 : Surface mounted on FR4 board using a 92mm², 1 oz. Cu pad.
Unit
C/W
C/W
1
1 : Gate
2 : Source
3 : Drain
2
MARKING
3
1
2 CPH3
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
January 2016 - Rev. 0
Publication Order Number :
NVC3S5A51PLZ/D