NVATS5A113PLZ Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET

NVATS5A113PLZ
Power MOSFET
60 V, 29.5 mΩ, 38 A, P-Channel
Automotive Power MOSFET designed for compact and efficient designs and
including high thermal performance.
AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive
applications.
Features
 Low On-Resistance
 High Current Capability
 100% Avalanche Tested
 AEC-Q101 qualified and PPAP capable
ATPAK package is pin-compatible with DPAK (TO-252)
 Pb-Free, Halogen Free and RoHS compliance
Typical Applications
 Reverse Battery Protection
 Load Switch
 Automotive Front Lighting
 Automotive Body Controllers
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
20
V
Drain Current (DC)
ID
Drain Current (Pulse)
PW  10 s, duty cycle  1%
IDP
Power Dissipation
Tc = 25C
PD
38
A
114
A
60
W
Operating Junction and
Storage Temperature
Tj, Tstg
55 to +175 C
Avalanche Energy (Single Pulse) (Note 2) EAS
95 mJ
Avalanche Current (Note 3)
IAV
18
A
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
2 : VDD = 10 V, L = 500 H, IAV = 18 A
3 : L ≤ 500 H, Single pulse
THERMAL RESISTANCE RATINGS
Parameter
Junction to Case Steady State (Tc = 25C)
Symbol
R_JC
Value
2.5
Unit
C/W
Junction to Ambient (Note 4)
R_JA
80.1
Note 4 : Surface mounted on FR4 board using a 130 mm², 1 oz. Cu pad.
C/W
www.onsemi.com
VDSS
60 V
RDS(on) Max
29.5 mΩ @ 10 V
38 mΩ @ 4.5 V
44 mΩ @ 4 V
ID _Max
38 A
ELECTRICAL CONNECTION
P-Channel
2, 4
1
1 : Gate
2 : Drain
3 : Source
4 : Drain
3
4
12
3
ATPAK
MARKING
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
June 2016 - Rev. 0
Publication Order Number :
NVATS5A113PLZ/D