NVATS4A102PZ Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET

NVATS4A102PZ
Power MOSFET
30 V, 18.5 mΩ, 44 A, P-Channel
The NVATS4A102PZ is a power MOSFET designed for compact size and
high efficiency which can achieve high thermal performance.
AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive
applications.
Features
 Low On-Resistance
 High Current Capability
 100% Avalanche Tested
 AEC-Q101 qualified and PPAP capable
ATPAK package is pin-compatible with DPAK (TO-252)
 Pb-Free, Halogen Free and RoHS compliance
Typical Applications
 Reverse Battery Protection
 Load Switch
 Automotive Front Lighting
 Automotive Body Controllers
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
PW  10 s, duty cycle  1%
Power Dissipation
Tc = 25C
VDSS
VGSS
ID
IDP
PD
30
V
20
V
44
A
132
A
48
W
Operating Junction and
Storage Temperature
Tj, Tstg
55 to +175 C
Avalanche Energy (Single Pulse) (Note 2) EAS
58 mJ
Avalanche Current (Note 3)
IAV
20
A
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
2 : VDD = 10 V, L = 200 H, IAV = 20 A
3 : L ≤ 200 H, Single pulse
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Junction to Case Steady State (Tc = 25C) R_JC
Value
3.1
Unit
C/W
Junction to Ambient (Note 4)
R_JA
80.4
Note 4 : Surface mounted on FR4 board using a 130 mm², 1 oz. Cu pad.
C/W
www.onsemi.com
VDSS
30 V
RDS(on) Max
18.5 mΩ @ 10 V
31 mΩ @ 4.5 V
ID _Max
44 A
ELECTRICAL CONNECTION
P-Channel
2,4
1
1 : Gate
2 : Drain
3 : Source
4 : Drain
3
4
12
3
ATPAK
MARKING
ATP102
LOT No.
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
March 2017 - Rev. 0
Publication Order Number :
NVATS4A102PZ/D