NUS5531MT Datasheet, PDF (1/10 Pages) ON Semiconductor – Main Switch Power MOSFET and Single Charging BJT

NUS5531MT
Main Switch Power
MOSFET and Single
Charging BJT
−12 V, −6.2 A, Single P−Channel FET with
Single PNP low V_ce(sat) Transistor,
3x3 mm WDFN Package
This device integrates one high performance power MOSFET and
one low V_ce(sat) transistor, greatly reducing the layout space and
optimizing charging performance in battery−powered portable
electronics.
Features
• High Performance Power MOSFET
• Single Low V_ce(sat) Transistor as Charging Power Mux
• 3.0x3.0x0.8 mm WDFN Package
• Independent Pin−out Provides Circuit Flexibility
• Low Profile (<0.8 mm) for Easy Fit in Thin Environments
• This is a Pb−Free Device
Applications
• Main Switch and Battery Charging Mux for Portable Electronics
• Optimized for Commercial PMUs from Top Suppliers (See Figure 2)
Emitter 1
Emitter 2
Collector 3
Source 4
8 Base
7 N/C
6 Gate
5 Drain
http://onsemi.com
MOSFET
V_(BR)DSS
−12 V
R_DS(on) TYP
32 mW @ −4.5 V
44 mW @ −2.5 V
I_D MAX
−6.2 A
Low V_ce(sat) PNP (Wall/USB)
V_CEO MAX
V_EBO MAX
I_C MAX
−20 V
−7.0 V
−2.0 A
8
1
WDFN8
CASE 506BC
MARKING DIAGRAM
1 ₅₅₃₁
AYWW G
G
5531 = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Base 8
NC 7
Collector
10
GATE 6
Drain ⁵
Drain
9
1 Emitter
2 Emitter
3 Collector
4 Source
(Bottom View)
(Top View)
Figure 1. Simple Schematic
ORDERING INFORMATION
Device
Package
Shipping^†
NUS5531MTR2G WDFN8 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
July, 2008 − Rev. 1
Publication Order Number:
NUS5531MT/D