NUS3116MT Datasheet, PDF (1/10 Pages) ON Semiconductor – Main Switch Power MOSFET and Dual Charging BJT

NUS3116MT
Main Switch Power
MOSFET and Dual Charging
BJT
-12 V, -6.2 A, mCoolE Single P-Channel
with Dual PNP low V_ce(sat) Transistors,
3x3Ămm WDFN Package
This device integrates one high performance power MOSFET and
two low V_ce(sat) transistors, greatly reducing the layout space and
optimizing charging performance in the battery-powered portable
electronics.
Features
•ăHigh Performance Power MOSFET
•ăDual-Low V_ce(sat) Transistors as Charging Power Mux
•ă3.0x3.0x0.8 mm WDFN Package
•ăIndependent Pin-out Provides Circuit Flexibility
•ăLow Profile (<0.8 mm) for Easy Fit in Thin Environments
•ăThis is a Pb-Free Device
Applications
•ăMain Switch and Battery Charging Mux for Portable Electronics
•ăOptimized for Commercial PMUs from Top Suppliers (See Figure 2)
1
2
3
D
8
C
7
6
http://onsemi.com
V_(BR)DSS
-12 V
MOSFET
R_DS(on) TYP
32 mW @ -4.5 V
44 mW @ -2.5 V
I_D MAX
-6.2 A
Low V_ce(sat) PNP (Wall)
V_CEO MAX
V_EBO MAX
I_C MAX
-30 V
-8.0 V
-2.0 A
Low V_ce(sat) PNP (USB)
V_CEO MAX
V_EBO MAX
I_C MAX
-30 V
-8.0 V
-2.0 A
8
1
DFN8
CASE 506BC
MARKING DIAGRAM
1 ₃₁₁₆
AYWWĂG
G
3116 = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb-Free Package
(Note: Microdot may be in either location)
4
5
mCOOL™ 3x3 Pin Connections
(Top View)
Figure 1. Simple Schematic
ORDERING INFORMATION
Device
Package
Shipping^†
NUS3116MTR2G WDFN8 3000/Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©Ă Semiconductor Components Industries, LLC, 2007
May, 2007 - Rev. 0
Publication Order Number:
NUS3116MT/D