NUS2501W6 Datasheet, PDF (1/6 Pages) ON Semiconductor – Integrated NPN Digital Transistor with Switching Transistor with Switching

NUS2501W6
Integrated NPN Digital
Transistor with Switching
Diode Array
This new option of integrated devices is designed to replace a
discrete solution of a single transistor with three switching diodes.
BRT (Bias Resistor Transistor) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. The BRT technology eliminates
these individual components by integrating them into a single device,
therefore integration of a single BRT with three switching diodes
results in a significant reduction of both system cost and board space.
This new device is offered in the SC−88 surface mount package.
Features
• Single SC−88 Surface Mount Package
• Moisture Sensitivity Level 1
Benefits
• Integration of Six Discrete Components
• Integrated Solution Offers Cost and Space Savings
• Integrated Solution Improves System Reliability
Applications
• Wireless Phones
• Handheld Products
• Notebook Computers
• LCD Display Panels
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted.)
Rating
Symbol
Value
Collector−Base Voltage
V_CBO
50
Collector−Emitter Voltage
V_CEO
50
Collector Current
I_C
100
Diode Reverse Voltage
V_R
80
Diode Peak Reverse Voltage
V_RM
80
Diode Forward Current
I_F
100
Diode Peak Forward Current
I_FM
300
Unit
Vdc
Vdc
mAdc
Vdc
Vdc
mAdc
mAdc
http://onsemi.com
1
6
2
5
3
4
6
1
SC−88
(SOT−363)
CASE 419B
MARKING
DIAGRAM
6
LG^d
1
LG = Specific Device Code
d = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
NUS2501W6T1
SC−88 3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
January, 2004 − Rev. P1
Publication Order Number:
NUS2501W6/D