NUP4301MR6T1 Datasheet, PDF (1/4 Pages) ON Semiconductor – Low Capacitance Diode Array for ESD Protection in Four Data Lines

NUP4301MR6T1
Low Capacitance Diode
Array for ESD Protection in
Four Data Lines
NUP4301MR6T1 is a MicroIntegration™ device designed to
provide protection for sensitive components from possible harmful
electrical transients; for example, ESD (electrostatic discharge).
Features
• Low Capacitance (1.5 pf Maximum Between I/O Lines)
• Single Package Integration Design
• Provides ESD Protection for JEDEC Standards JESD22
Machine Model = Class C
Human Body Model = Class 3B
• Protection for IEC61000-4-2 (Level 4)
8.0 kV (Contact)
15 kV (Air)
• Ensures Data Line Speed and Integrity
• Fewer Components and Less Board Space
• Direct the Transient to Either Positive Side or to the Ground
Applications
• USB 1.1 and 2.0 Data Line Protection
• T1/E1 Secondary IC Protection
• T3/E3 Secondary IC Protection
• HDSL, IDSL Secondary IC Protection
• Video Line Protection
• Microcontroller Input Protection
• Base Stations
• I²C Bus Protection
MAXIMUM RATINGS (Each Diode) (T_J = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward
Current (Note 1)
(averaged over any 20 ms period)
V_R
70
Vdc
I_F
200
mAdc
I_FM(surge)
500
mAdc
V_RRM
70
V
I_F(AV)
715
mA
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Current
t = 1.0 ms
t = 1.0 ms
t = 1.0 S
1. FR-5 = 1.0  0.75  0.062 in.
I_FRM
I_FSM
450
mA
A
2.0
1.0
0.5
http://onsemi.com
PIN CONFIGURATION
AND SCHEMATIC
I/O 1
V_N 2
1/O 3
6 I/O
5 V_P
4 I/O
54
6
123
TSOP-6
CASE 318F
PLASTIC
MARKING DIAGRAM
64^d
64 = Specific Device Code
d _{= Date Code}
ORDERING INFORMATION
Device
Package
Shipping
NUP4301MR6T1 TSOP-6 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2003
1
February, 2003 - Rev. 2
Publication Order Number:
NUP4301MR6T1/D