NUP1301ML3T1G Datasheet, PDF (1/4 Pages) ON Semiconductor – Low Capacitance Diode

NUP1301ML3T1G,
SZNUP1301ML3T1G
Low Capacitance Diode
Array for ESD Protection in
a Single Data Line
NUP1301ML3T1G is a MicroIntegration device designed to
provide protection for sensitive components from possible harmful
electrical transients; for example, ESD (electrostatic discharge).
Features
• Low Capacitance (0.9 pF Maximum)
• Single Package Integration Design
• Provides ESD Protection for JEDEC Standards JESD22
Machine Model = Class C
Human Body Model = Class 3B
• Protection for IEC61000−4−2 (Level 4)
8.0 kV (Contact)
15 kV (Air)
• Ensures Data Line Speed and Integrity
• Fewer Components and Less Board Space
• Direct the Transient to Either Positive Side or to the Ground
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• Pb−Free Package is Available
Applications
• T1/E1 Secondary IC Protection
• T3/E3 Secondary IC Protection
• HDSL, IDSL Secondary IC Protection
• Video Line Protection
• Microcontroller Input Protection
• Base Stations
• I²C Bus Protection
www.onsemi.com
SOT−23
CASE 318
STYLE 11
ANODE
1
CATHODE
2
3
CATHODE/ANODE
MARKING DIAGRAM
53 MG
G
1
53 = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping^†
NUP1301ML3T1G
SOT−23
3,000 /
(Pb−Free) Tape & Reel
SZNUP1301ML3T1G SOT−23
3,000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
1
October, 2016 − Rev. 7
Publication Order Number:
NUP1301ML3T1/D