NTZS3151P_13 Datasheet, PDF (1/5 Pages) ON Semiconductor – Small Signal MOSFET

NTZS3151P
Small Signal MOSFET
−20 V, −950 mA, P−Channel SOT−563
Features
• Low R_DS(on) Improving System Efficiency
• Low Threshold Voltage
• Small Footprint 1.6 x 1.6 mm
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Load/Power Switches
• Battery Management
• Cell Phones, Digital Cameras, PDAs, Pagers, etc.
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted.)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current
(Note 1)
Power Dissipation
(Note 1)
Steady ^{TA = 25°C}
State _{TA = 70°C}
Steady State
V_DSS
V_GS
I_D
P_D
−20 V
±8.0 V
−860 mA
−690
170 mW
Continuous Drain Current
T_A = 25°C
(Note 1)
tv5s
T_A = 70°C
I_D
Power Dissipation
(Note 1)
tv5s
P_D
−950 mA
−760
210 mW
Pulsed Drain Current
t_p = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_DM
T_J,
T_STG
I_S
T_L
−4.0 A
−55 to °C
150
−360 mA
260 °C
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – t v 5 s (Note 1)
Symbol
R_qJA
R_qJA
Max
720
600
Unit
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in. sq. pad size
(Cu. area = 1.127 in. sq. [1 oz.] including traces).
http://onsemi.com
V_(BR)DSS
−20 V
R_DS(on) Typ
120 mW @ −4.5 V
144 mW @ −2.5 V
195 mW @ −1.8 V
I_D Max
−950 mA
P−Channel MOSFET
D
G
S
6
1
SOT−563−6
CASE 463A
MARKING
DIAGRAM
TX M G
G
TX
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PINOUT: SOT−563
D1
6D
D2
5D
G3
4S
Top View
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
January, 2013 − Rev. 3
Publication Order Number:
NTZS3151P/D