NTY100N10 Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET 123 A, 100 V N-Channel Enhancement-Mode TO264 Package

NTY100N10
Preferred Device
Power MOSFET 123 A,
100 V N−Channel
Enhancement−Mode TO264
Package
Features
• Source-to-Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Avalanche Energy Specified
• IDSS and R_DS(on) Specified at Elevated Temperature
Applications
• PWM Motor Control
• Power Supplies
• Converters
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain-Source Voltage
Drain-Gate Voltage (R_GS = 1 MW)
Gate-Source Voltage
- Continuous
- Non-Repetitive (t_p v 10 ms)
Drain Current (Note 1)
- Continuous @ T_C = 25°C
- Pulsed
Total Power Dissipation (Note 1)
Derate above 25°C
V_DSS
V_DGR
V_GS
V_GSM
I_D
I_DM
P_D
100
V
100
V
$ 20 V
$ 40 V
A
123
A
369
313 Watts
5.0 W/°C
Operating and Storage Temperature Range
T_J, T_stg - 55 to °C
150
Single Pulse Drain-to-Source
Avalanche Energy - Starting T_J = 25°C
(V_DD = 80 Vdc, V_GS = 10 Vdc, Peak
I_L = 100 Apk, L = 0.1 mH, R_G = 25 W)
Thermal Resistance
- Junction to Case
- Junction to Ambient
Maximum Lead Temperature for Soldering Pur-
poses, 0.125 in from case for 10 seconds
E_AS
R_qJC
R_qJA
T_L
500 mJ
0.4 °C/W
25
260 °C
1. Pulse Test: Pulse Width = 10 ms, Duty-Cycle = 2%.
http://onsemi.com
123 A, 100 V
9 mW @ V_GS = 10 V (TYP)
N-Channel
D
G
S
MARKING
DIAGRAM
1
23
TO-264
340G
Style 1
NTY100N10
LLYWW
1
Gate
3
Source
2
Drain
LL
=Location Code
Y
= Year
WW = Work Week
ORDERING INFORMATION
Device
NTY100N10
Package
TO-264
Shipping
25 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2003
1
February, 2003 - Rev. 0
Publication Order Number:
NTY100N10/D