NTVS3141P_09 Datasheet, PDF (1/6 Pages) ON Semiconductor – −20 V, −3.7 A, 85 m, Single P−Channel, CSP 1.0x1.5x0.65 mm

NTVS3141P
Power MOSFET
−20 V, −3.7 A, 85 mW, Single P−Channel,
CSP 1.0x1.5x0.65 mm
Features
• Low R_DS(on) at Low Gate Voltage
• Chip Scale Packaging
• High Power Density (A/mm²)
• This is a Pb−Free Device
Applications
• Load Switch in Cell Phone, DSC, PMP, GPS, PC’s
• Battery Charging Switch
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
−20
V
Gate−to−Source Voltage
V_GS
"8
V
Continuous Drain
Current (Note 1)
Steady
State
T_A = 25°C
I_D
−3.7
A
Continuous Drain
Current (Note 2)
Steady
State
T_A = 25°C
I_D
−2.9
A
Power Dissipation Steady
(Note 1)
State
T_A = 25°C
P_D
1.5
W
Power Dissipation Steady
(Note 2)
State
T_A = 25°C
P_D
0.9
W
Pulsed Drain Current
t_p = 10 ms
I_DM
−15
A
Operating Junction and Storage
Temperature
T_J, T_STG −55 to 150 °C
Source Current (Body Diode)
I_S
Lead Temperature for Soldering Purposes
T_L
(IR/Convection)
−1.1
A
250
°C
THERMAL RESISTANCE RATINGS
Rating
Symbol
Max
Unit
Junction−to−Ambient – Steady State
(Note 1)
R_θJA
83
°C/W
Junction−to−Ambient – Steady State
(Note 2)
R_θJA
133
°C/W
1. Surface−mounted on FR4 board using 1 inch sq pad size
(Cu area = 1 in sq [2 oz] including traces)
2. Surface−mounted on FR4 board using 77.3 sq mm min pad, 2 oz Cu.
© Semiconductor Components Industries, LLC, 2009
1
March, 2009 − Rev. 0
http://onsemi.com
V_(BR)DSS
−20 V
R_DS(ON) MAX
85 mΩ @ −4.5 V
123 mΩ @ −2.5 V
150 mΩ @ −1.8 V
200 mΩ @ −1.5 V
I_D MAX
(Note 1)
−3.7 A
S
G
D
P−Channel MOSFET
A1
6 PIN FLIP−CHIP
1.0 x 1.5
CASE 499BC
PIN CONNECTION AND MARKING
DIAGRAM
3141 = Specific Device Code
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping^†
NTVS3141PT2G CSP−6 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTVS3141P/D