NTTS2P03R2 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET -2.48 Amps, -30 Volts P−Channel Enhancement Mode Single Micro8 Package

NTTS2P03R2
Power MOSFET
−2.48 Amps, −30 Volts
P−Channel Enhancement Mode
Single Micro8t Package
Features
• Ultra Low R_DS(on)
• Higher Efficiency Extending Battery Life
• Miniature Micro8 Surface Mount Package
• Diode Exhibits High Speed, Soft Recovery
• Micro8 Mounting Information Provided
Applications
• Power Management in Portable and Battery−Powered Products, i.e.:
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance −
Junction−to−Ambient (Note 1.)
Total Power Dissipation @ T_A = 25°C
Continuous Drain Current @ T_A = 25°C
Continuous Drain Current @ T_A = 70°C
Thermal Resistance −
Junction−to−Ambient (Note 2.)
Total Power Dissipation @ T_A = 25°C
Continuous Drain Current @ T_A = 25°C
Continuous Drain Current @ T_A = 70°C
Thermal Resistance −
Junction−to−Ambient (Note 3.)
Total Power Dissipation @ T_A = 25°C
Continuous Drain Current @ T_A = 25°C
Continuous Drain Current @ T_A = 70°C
Pulsed Drain Current (Note 5.)
Thermal Resistance −
Junction−to−Ambient (Note 4.)
Total Power Dissipation @ T_A = 25°C
Continuous Drain Current @ T_A = 25°C
Continuous Drain Current @ T_A = 70°C
Pulsed Drain Current (Note 5.)
Operating and Storage
Temperature Range
V_DSS
V_GS
R_θJA
P_D
I_D
I_D
R_θJA
P_D
I_D
I_D
R_θJA
P_D
I_D
I_D
I_DM
R_θJA
P_D
I_D
I_D
I_DM
T_J, T_stg
−30
V
"20
V
160
0.78
−2.48
−1.98
°C/W
W
A
A
70
1.78
−3.75
−3.0
°C/W
W
A
A
210
0.60
−2.10
−1.67
−17
°C/W
W
A
A
A
100
1.25
−3.02
−2.42
−24
−55 to
+150
°C/W
W
A
A
A
°C
1. Minimum FR−4 or G−10 PCB, Time ≤ 10 Seconds.
2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single
sided), Time ≤ 10 Seconds.
3. Minimum FR−4 or G−10 PCB, Steady State.
4. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single
sided), Steady State.
5. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
http://onsemi.com
−2.48 AMPERES
−30 VOLTS
85 mW @ V_GS = −10 V
Single P−Channel
D
G
S
8
1
Micro8
CASE 846A
STYLE 1
MARKING DIAGRAM
& PIN ASSIGNMENT
Source
Source
Source
Gate
1
8
2 YWW 7
3 ^AE 6
4
5
Drain
Drain
Drain
Drain
(Top View)
Y = Year
WW = Work Week
AE = Device Code
ORDERING INFORMATION
Device
Package
Shipping^†
NTTS2P03R2
Micro8 4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2003
1
December, 2003 − Rev. 1
Publication Order Number:
NTTS2P03R2/D