NTTS2P02R2 Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET -2.4 Amps, -20 Volts Single P-Channel Micro8

NTTS2P02R2
Power MOSFET
-2.4 Amps, -20 Volts
Single P–Channel Micro8t
Features
• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature Micro–8 Surface Mount Package
• Diode Exhibits High Speed, Soft Recovery
• Micro8 Mounting Information Provided
Applications
• Power Management in Portable and Battery–Powered Products, i.e.:
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Thermal Resistance –
Junction–to–Ambient (Note 1.)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Pulsed Drain Current (Note 3.)
Thermal Resistance –
Junction–to–Ambient (Note 2.)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Pulsed Drain Current (Note 3.)
Operating and Storage
Temperature Range
VDSS
VGS
R_θJA
PD
ID
ID
IDM
R_θJA
PD
ID
ID
IDM
TJ, Tstg
–20
±8.0
160
0.78
–2.4
–1.92
–20
88
1.42
–3.25
–2.6
–30
–55 to
+150
V
V
°C/W
W
A
A
A
°C/W
W
A
A
A
°C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = –20 Vdc, VGS = –4.5 Vdc,
Peak IL = –5.0 Apk, L = 28 mH,
RG = 25 Ω)
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
EAS
TL
350
mJ
260
°C
1. Minimum FR–4 or G–10 PCB, Steady State.
2. Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz Cu 0.06″ thick single
sided), Steady State.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
http://onsemi.com
–2.4 AMPERES
–20 VOLTS
RDS(on) = 90 mW
Single P–Channel
D
G
8
1
Micro8
CASE 846A
STYLE 1
S
MARKING
DIAGRAM
YWW
AD
Y
= Year
WW = Work Week
AD
= Device Code
PIN ASSIGNMENT
Source
Source
Source
Gate
18
2
7
3
6
4
5
Top View
Drain
Drain
Drain
Drain
ORDERING INFORMATION
Device
Package
Shipping
NTTS2P02R2 Micro8 4000/Tape & Reel
© Semiconductor Components Industries, LLC, 2000
1
December, 2000 – Rev. 4
Publication Order Number:
NTTS2P02R2/D