NTTFS5826NL Datasheet, PDF (1/6 Pages) ON Semiconductor – NTTFS5826NL 60 V, 24 m, Single N−Channel, 8FL

NTTFS5826NL
Power MOSFET
60 V, 24 mW, Single N−Channel, m8FL
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Designs
• Low Q_G(TOT) to Minimize Switching Losses
• Low Capacitance to Minimize Driver Losses
• These are Pb−Free Devices
Applications
• Motor Drivers
• DC−DC Converters
• Synchronous Rectification
• Power Management
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R_YJ−mb
(Notes 1, 2, and 3)
V_DSS
60
V
T_mb = 25°C
V_GS
I_D
"20 V
20
A
T_mb = 100°C
14
Power Dissipation
T_mb = 25°C
P_D
R_YJ−mb (Notes 1, 2,
and 3)
Steady ^{Tmb = 100°C}
Continuous Drain
State _{TA = 25°C}
I_D
Current R_qJA (Notes 1
& 3)
T_A = 100°C
19
W
10
8
A
6
Power Dissipation
R_qJA (Notes 1 & 3)
T_A = 25°C
P_D
T_A = 100°C
3.1
W
1.6
Pulsed Drain Current T_A = 25°C, t_p = 10 ms
I_DM
133
A
Operating Junction and Storage Temperature
T_J, T_stg − 55 to °C
175
Source Current (Body Diode)
I_S
20
A
Single Pulse Drain−to−Source Avalanche
Energy (T_J = 25°C, V_DD = 50 V, V_GS = 10 V,
I_L(pk) = 14.4 A, L = 1.0 mH, R_G = 25 W)
E_AS
20
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T_L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Mounting Board (top) − Steady
State (Notes 2, 3)
R_YJ−mb
7.9 °C/W
Junction−to−Ambient − Steady State (Note 3) R_qJA
48
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm², 2 oz. Cu pad.
http://onsemi.com
V_(BR)DSS
60 V
R_DS(on) MAX
24 mW @ 10 V
32 mW @ 4.5 V
I_D MAX
20 A
N−Channel
D
G
S
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
S
D
S
5826
D
S AYWWG D
G
G
D
5826
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
NTTFS5826NLTAG WDFN8 1500/Tape & Reel
(Pb−Free)
NTTFS5826NLTWG WDFN8 5000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
November, 2011 − Rev. 2
Publication Order Number:
NTTFS5826NL/D