NTTFS4H05N Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET Single N−Channel

NTTFS4H05N
Power MOSFET
25 V, 94 A, Single N−Channel, m8−FL
Features
• Optimized Design to Minimize Conduction and Switching Losses
• Optimized Package to Minimize Parasitic Inductances
• Optimized material for improved thermal performance
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• High Performance DC-DC Converters
• System Voltage Rails
• Netcom, Telecom
• Servers & Point of Load
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current R_qJA
(T_A = 25°C, Note 1)
Power Dissipation R_qJA
(T_A = 25°C, Note 1)
Continuous Drain Current R_qJC
(T_C = 25°C, Note 1)
Power Dissipation R_qJC
(T_C = 25°C, Note 1)
Pulsed Drain Current (t_p = 10 ms)
Single Pulse Drain-to-Source Avalanche
Energy (Note 1)
(I_L = 41 A_pk, L = 0.1 mH) (Note 3)
Drain to Source dV/dt
V_DSS
25
V
V_GS
±20
V
I_D
22.4
A
P_D
2.66
W
I_D
94
A
P_D
46.3
W
I_DM
304
A
E_AS
84
mJ
dV/dt
7
V/ns
Maximum Junction Temperature
Storage Temperature Range
T_J(max)
150
°C
T_STG
−55 to
°C
150
Lead Temperature Soldering Reflow (SMD
T_SLD
260
°C
Styles Only), Pb-Free Versions (Note 2)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Values based on copper area of 645 mm² (or 1 in²) of 2 oz copper thickness
and FR4 PCB substrate.
2. For more information, please refer to our Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3. This is the absolute maximum rating. Parts are 100% UIS tested at T_J = 25°C,
V_GS = 10 V, I_L = 27 A, E_AS = 36 mJ.
THERMALCHARACTERISTICS
Parameter
Symbol Max Units
Thermal Resistance,
Junction-to-Ambient (Note 1 and 4)
Junction-to-Case (Note 1 and 4)
R_qJA
47
R_qJC
2.7
4. Thermal Resistance R_qJA and R_qJC as defined in JESD51−3.
°C/W
www.onsemi.com
V_GS
4.5 V
10 V
MAX R_DS(on)
4.8 mW
3.3 mW
TYP Q_GTOT
8.7 nC
18.9 nC
PIN CONNECTIONS
m8−FL (3.3 x 3.3 mm)
(Top View)
(Bottom View)
N−CHANNEL MOSFET
D (5−8)
G (4)
S (1,2,3)
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
July, 2015 − Rev. 3
Publication Order Number:
NTTFS4H05N/D