NTTFS4C25N Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET

NTTFS4C25N
Power MOSFET
30 V, 27 A, Single N−Channel, m8FL
Features
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters
• Power Load Switch
• Notebook Battery Management
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R_qJA (Note 1)
Power Dissipation R_qJA
(Note 1)
V_DSS
30
V
V_GS
±20 V
T_A = 25°C
I_D
7.7
A
T_A = 85°C
5.8
T_A = 25°C
P_D
1.63 W
Continuous Drain
Current R_qJA ≤ 10 s
(Note 1)
T_A = 25°C
I_D
T_A = 85°C
12.2 A
9.1
Power Dissipation
R_qJA ≤ 10 s (Note 1)
Continuous Drain
Current R_qJA (Note 2)
Steady
State
T_A = 25°C
T_A = 25°C
T_A = 85°C
Power Dissipation
R_qJA (Note 2)
T_A = 25°C
Continuous Drain
Current R_qJC (Note 1)
T_C = 25°C
T_C = 85°C
Power Dissipation
R_qJC (Note 1)
T_C = 25°C
Pulsed Drain Current
T_A = 25°C, t_p = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
P_D
4.1 W
I_D
5.0
A
3.8
P_D
0.69 W
I_D
27
A
20
P_D
20.2 W
I_DM
T_J,
T_stg
I_S
dV/dt
81
−55 to
+150
17
6.0
A
°C
A
V/ns
Single Pulse Drain−to−Source Avalanche Energy
E_AS
(T_J = 25°C, V_DD = 50 V, V_GS = 10 V,
I_L = 16 A_pk, L = 0.1 mH, R_G = 25 W) (Note 3)
Lead Temperature for Soldering Purposes
T_L
(1/8″ from case for 10 s)
13 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum rating. Parts are 100% tested at T_J = 25°C,
V_GS = 10 V, I_L = 11 Apk, E_AS = 6 mJ.
http://onsemi.com
V_(BR)DSS
30 V
R_DS(on) MAX
17 mW @ 10 V
26.5 mW @ 4.5 V
I_D MAX
27 A
N−Channel MOSFET
D (5−8)
G (4)
S (1,2,3)
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
S
D
S
4C25
D
S AYWWG D
G
G
D
4C25
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
NTTFS4C25NTAG WDFN8 1500 / Tape &
(Pb−Free)
Reel
NTTFS4C25NTWG WDFN8 5000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
1
October, 2012 − Rev. 0
Publication Order Number:
NTTFS4C25N/D