NTTFS4C13N Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET

NTTFS4C13N
Power MOSFET
30 V, 38 A, Single N−Channel, m8FL
Features
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R_qJA
(Note 1)
V_DSS
30
V
V_GS
±20
V
T_A = 25°C
I_D
11.7
A
T_A = 80°C
8.5
Power Dissipation
R_qJA (Note 1)
Continuous Drain
Current R_qJA ≤ 10 s
(Note 1)
T_A = 25°C
P_D
T_A = 25°C
I_D
T_A = 80°C
2.06 W
15.8
A
11.4
Power Dissipation
T_A = 25°C
P_D
R_qJA ≤ 10 s (Note 1) _Steady
Continuous Drain
State _{TA = 25°C}
I_D
Current R_qJA
(Note 2)
T_A = 80°C
3.73 W
7.2
A
5.2
Power Dissipation
R_qJA (Note 2)
Continuous Drain
Current R_qJC
(Note 1)
T_A = 25°C
P_D
T_C = 25°C
I_D
T_C =80°C
0.78 W
38
A
27
Power Dissipation
R_qJC (Note 1)
T_C = 25°C
P_D
Pulsed Drain
Current
T_A = 25°C, t_p = 10 ms
I_DM
21.5 W
68
A
Current Limited by Package
T_A = 25°C
I_Dmax
70
A
Operating Junction and Storage
Temperature
T_J,
T_STG
−55 to °C
+150
Source Current (Body Diode)
I_S
19
A
Drain to Source DV/DT
dV/d_t
7.0 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (T_J = 25°C, V_GS = 10 V, I_L = 4 A_pk,
L = 0.1 mH, R_GS = 25 W) (Note 3)
E_AS
22
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T_L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is absolute maximum rating. Parts are tested at T_J = 25°C V_qs = 10 V,
I_L = 15 Apk, E_AS = 11 mJ.
http://onsemi.com
V_(BR)DSS
30 V
R_DS(ON) MAX
9.4 mW @ 10 V
14 mW @ 4.5 V
D (5−8)
I_D MAX
38 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
S
D
S
4C13
D
S AYWWG D
G
G
D
4C13
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTTFS4C13NTAG
Package
WDFN8
(Pb−Free)
Shipping^†
1500 /
Tape & Reel
NTTFS4C13NTWG WDFN8
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
June, 2014 − Rev. 1
Publication Order Number:
NTTFS4C13N/D