NTTFS4C08N Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET

NTTFS4C08N
Power MOSFET
30 V, 52 A, Single N−Channel, m8FL
Features
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters
• Power Load Switch
• Notebook Battery Management
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
30
V
Gate−to−Source Voltage
Continuous Drain
Current R_qJA (Note 1)
Power Dissipation R_qJA
(Note 1)
V_GS
±20 V
T_A = 25°C
I_D
15
A
T_A = 85°C
10.8
T_A = 25°C
P_D
2.13 W
Continuous Drain
Current R_qJA ≤ 10 s
(Note 1)
T_A = 25°C
I_D
T_A = 85°C
21
A
15
Power Dissipation
R_qJA ≤ 10 s (Note 1)
Continuous Drain
Current R_qJA (Note 2)
Steady
State
T_A = 25°C
T_A = 25°C
T_A = 85°C
Power Dissipation
R_qJA (Note 2)
T_A = 25°C
Continuous Drain
Current R_qJC (Note 1)
T_C = 25°C
T_C = 85°C
Power Dissipation
R_qJC (Note 1)
T_C = 25°C
Pulsed Drain Current
T_A = 25°C, t_p = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
P_D
I_D
P_D
I_D
P_D
I_DM
T_J,
T_stg
I_S
dV/dt
4.2 W
9.3 A
6.7
0.82 W
52
A
37.5
25.5 W
144 A
−55 to °C
+150
23
A
6.0 V/ns
Single Pulse Drain−to−Source Avalanche Energy
E_AS
(T_J = 25°C, V_GS = 10 V, I_L = 29 A_pk, L = 0.1 mH,
R_G = 25 W) (Note 3)
Lead Temperature for Soldering Purposes
T_L
(1/8″ from case for 10 s)
42 mJ
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at T_J = 25°C,
V_GS = 10 V, I_L = 21 A, E_AS = 22 mJ.
www.onsemi.com
V_(BR)DSS
30 V
R_DS(on) MAX
5.9 mW @ 10 V
9.0 mW @ 4.5 V
I_D MAX
52 A
N−Channel MOSFET
D (5−8)
G (4)
S (1,2,3)
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
S
D
S
4C08
D
S AYWWG D
G
G
D
4C08
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
NTTFS4C08NTAG WDFN8 1500 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
1
April, 2015 − Rev. 2
Publication Order Number:
NTTFS4C08N/D