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NTTFS4C06N Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET | |||
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NTTFS4C06N
Power MOSFET
30 V, 67 A, Single NâChannel, m8FL
Features
⢠Low RDS(on) to Minimize Conduction Losses
⢠Low Capacitance to Minimize Driver Losses
⢠Optimized Gate Charge to Minimize Switching Losses
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
⢠DCâDC Converters
⢠Power Load Switch
⢠Notebook Battery Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
VDSS
30
V
GateâtoâSource Voltage
Continuous Drain
Current RqJA (Note 1)
VGS
TA = 25°C
ID
TA = 85°C
±20 V
18
A
13
Power Dissipation RqJA
(Note 1)
TA = 25°C
PD
2.16 W
Continuous Drain
Current RqJA ⤠10 s
(Note 1)
TA = 25°C
ID
25.6 A
TA = 85°C
18.5
Power Dissipation
RqJA ⤠10 s (Note 1)
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
Power Dissipation
RqJA (Note 2)
TA = 25°C
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
TC = 85°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
PD
ID
PD
ID
PD
IDM
TJ,
Tstg
IS
dV/dt
4.4 W
11
A
8
0.81 W
67
A
49
31 W
166
â55 to
+150
28
7
A
°C
A
V/ns
Single Pulse DrainâtoâSource Avalanche Energy
EAS
(TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 37 Apk,
L = 0.1 mH, RG = 25 W) (Note 3)
Lead Temperature for Soldering Purposes
TL
(1/8â³ from case for 10 s)
68 mJ
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surfaceâmounted on FR4 board using 1 sqâin pad, 1 oz Cu.
2. Surfaceâmounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 20 A, EAS = 20 mJ.
© Semiconductor Components Industries, LLC, 2014
1
February, 2014 â Rev. 1
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
4.2 mW @ 10 V
6.1 mW @ 4.5 V
ID MAX
67 A
NâChannel MOSFET
D (5â8)
G (4)
S (1,2,3)
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
S
D
S
4C06
D
S AYWWG D
G
G
D
4C06
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbâFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shippingâ
NTTFS4C06NTAG WDFN8 1500 / Tape &
(PbâFree)
Reel
NTTFS4C06NTWG WDFN8 5000 / Tape &
(PbâFree)
Reel
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTTFS4C06N/D
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