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NTTFS4C05NTAG Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET 30 V, 75 A, Single N−Channel,8FL | |||
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NTTFS4C05N
Power MOSFET
30 V, 75 A, Single NâChannel, m8FL
Features
⢠Low RDS(on) to Minimize Conduction Losses
⢠Low Capacitance to Minimize Driver Losses
⢠Optimized Gate Charge to Minimize Switching Losses
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
⢠DCâDC Converters
⢠Power Load Switch
⢠Notebook Battery Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
GateâtoâSource Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation RqJA
(Note 1)
VDSS
30
V
VGS
±20 V
TA = 25°C
ID
19.4 A
TA = 85°C
14.5
TA = 25°C
PD
2.16 W
Continuous Drain
Current RqJA ⤠10 s
(Note 1)
TA = 25°C
ID
TA = 85°C
28
A
21
Power Dissipation
RqJA ⤠10 s (Note 1)
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
Power Dissipation
RqJA (Note 2)
TA = 25°C
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
TC = 85°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
PD
4.5 W
ID
12.0 A
8.9
PD
0.82 W
ID
75
A
56
PD
33 W
IDM
TJ,
Tstg
IS
dV/dt
174 A
â55 to °C
+150
30
A
6.0 V/ns
Single Pulse DrainâtoâSource Avalanche Energy
EAS
(TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 41 Apk,
L = 0.1 mH, RG = 25 W) (Note 3)
84 mJ
Lead Temperature for Soldering Purposes
(1/8â³ from case for 10 s)
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfaceâmounted on FR4 board using 1 sqâin pad, 1 oz Cu.
2. Surfaceâmounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 29 A, EAS = 42 mJ.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
3.6 mW @ 10 V
5.1 mW @ 4.5 V
ID MAX
75 A
NâChannel MOSFET
D (5â8)
G (4)
S (1,2,3)
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
S
D
S
4C05
D
S AYWWG D
G
G
D
4C05
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbâFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shippingâ
NTTFS4C05NTAG WDFN8 1500 / Tape &
(PbâFree)
Reel
NTTFS4C05NTWG WDFN8 5000 / Tape &
(PbâFree)
Reel
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
1
December, 2012 â Rev. 1
Publication Order Number:
NTTFS4C05N/D
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