NTTFS4985NF_15 Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET

NTTFS4985NF
Power MOSFET
30 V, 64 A, Single N−Channel, WDFN8
Features
• Integrated Schottky Diode
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free and are RoHS Compliant
Applications
• CPU Power Delivery
• Synchronous Rectification for DC−DC Converters
• Low Side Switching
• Telecom Secondary Side Rectification
www.onsemi.com
V_(BR)DSS
30 V
R_DS(on) MAX
3.5 mW @ 10 V
5.2 mW @ 4.5 V
I_D MAX
64 A
N−Channel MOSFET
D
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
30
V
G
Gate−to−Source Voltage
Continuous Drain
Current R_qJA (Note 1)
Power Dissipation R_qJA
(Note 1)
T_A = 25°C
T_A = 85°C
T_A = 25°C
Continuous Drain
Current R_qJA ≤ 10 s
(Note 1)
T_A = 25°C
T_A = 85°C
Power Dissipation
R_qJA ≤ 10 s (Note 1)
Continuous Drain
Current R_qJA (Note 2)
Steady
State
T_A = 25°C
T_A = 25°C
T_A = 85°C
Power Dissipation
R_qJA (Note 2)
T_A = 25°C
Continuous Drain
Current R_qJC (Note 1)
T_C = 25°C
T_C = 85°C
Power Dissipation
R_qJC (Note 1)
T_C = 25°C
Pulsed Drain Current
T_A = 25°C, t_p = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche Energy
(T_J = 25°C, V_DD = 50 V, V_GS = 10 V,
I_L = 32 A_pk, L = 0.1 mH, R_G = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
V_GS
I_D
P_D
I_D
P_D
I_D
P_D
I_D
P_D
I_DM
T_J,
T_stg
I_S
dV/dt
E_AS
T_L
±20 V
22
A
15.9
2.69 W
32.4 A
23.4
5.85 W
16.3 A
11.7
1.47 W
64
A
46
22.73 W
192 A
−55 to °C
+150
32
A
6.0 V/ns
52 mJ
260 °C
S
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
S
D
S
4985
D
S ^AYWWG D
G
G
D
4985
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping^†
NTTFS4985NFTAG WDFN8 1500 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size of 90 mm².
© Semiconductor Components Industries, LLC, 2015
1
April, 2015 − Rev. 2
Publication Order Number:
NTTFS4985NF/D