NTTFS4965NF Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET

NTTFS4965NF
Power MOSFET
30 V, 64 A, Single N−Channel, WDFN8
Features
• Integrated Schottky Diode
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free and are RoHS Compliant
Applications
• CPU Power Delivery
• Synchronous Rectification for DC−DC Converters
• Low Side Switching
• Telecom Secondary Side Rectification
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
http://onsemi.com
V_(BR)DSS
30 V
R_DS(on) MAX
3.5 mW @ 10 V
5.2 mW @ 4.5 V
I_D MAX
64 A
N−Channel MOSFET
D
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R_qJA (Note 1)
Power Dissipation R_qJA
(Note 1)
T_A = 25°C
T_A = 85°C
T_A = 25°C
Continuous Drain
Current R_qJA ≤ 10 s
(Note 1)
T_A = 25°C
T_A = 85°C
Power Dissipation
R_qJA ≤ 10 s (Note 1)
Continuous Drain
Current R_qJA (Note 2)
Steady
State
T_A = 25°C
T_A = 25°C
T_A = 85°C
Power Dissipation
R_qJA (Note 2)
T_A = 25°C
Continuous Drain
Current R_qJC (Note 1)
T_C = 25°C
T_C = 85°C
Power Dissipation
R_qJC (Note 1)
T_C = 25°C
Pulsed Drain Current
T_A = 25°C, t_p = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
V_DSS
V_GS
I_D
P_D
I_D
P_D
I_D
P_D
I_D
P_D
I_DM
T_J,
T_stg
I_S
dV/dt
30
V
±20 V
22
A
15.9
2.69 W
32.4 A
23.4
5.85 W
16.3 A
11.7
1.47 W
64
A
46
22.73 W
192 A
−55 to °C
+150
32
A
6.0 V/ns
G
1
WDFN8
(m8FL)
CASE 511AB
S
MARKING DIAGRAM
1
S
D
S
4965
D
S AYWWG D
G
G
D
4965
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping^†
NTTFS4965NFTAG WDFN8 1500 / Tape &
(Pb−Free)
Reel
NTTFS4965NFTWG WDFN8 5000 / Tape &
(Pb−Free)
Reel
Single Pulse Drain−to−Source Avalanche Energy
E_AS
(T_J = 25°C, V_DD = 50 V, V_GS = 10 V,
I_L = 32 A_pk, L = 0.1 mH, R_G = 25 W)
52 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T_L
260 °C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size of 90 mm².
© Semiconductor Components Industries, LLC, 2013
1
October, 2013 − Rev. 0
Publication Order Number:
NTTFS4965NF/D