NTTFS4932N Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET 30 V, 79 A, Single N−Channel, μ8FL

NTTFS4932N
Power MOSFET
30 V, 79 A, Single N−Channel, m8FL
Features
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Low−Side DC−DC Converters
• Power Load Switch
• Notebook Battery Management
• Motor Control
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R_qJA (Note 1)
Power Dissipation R_qJA
(Note 1)
V_DSS
30
V
V_GS
±20 V
T_A = 25°C
I_D
18
A
T_A = 85°C
13
T_A = 25°C
P_D
2.2 W
Continuous Drain
Current R_qJA ≤ 10 s
(Note 1)
T_A = 25°C
I_D
T_A = 85°C
25.5 A
18.5
Power Dissipation
R_qJA ≤ 10 s (Note 1)
Continuous Drain
Current R_qJA (Note 2)
Steady
State
T_A = 25°C
T_A = 25°C
T_A = 85°C
Power Dissipation
R_qJA (Note 2)
T_A = 25°C
Continuous Drain
Current R_qJC (Note 1)
T_C = 25°C
T_C = 85°C
Power Dissipation
R_qJC (Note 1)
T_C = 25°C
Pulsed Drain Current
T_A = 25°C, t_p = 10 ms
Current Limited by Pkg.
T_A = 25°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source DV/DT
P_D
I_D
P_D
I_D
P_D
I_DM
I_DmaxPkg
T_J,
T_stg
I_S
dV/dt
4.5
11
8.0
0.85
79
57
43
235
75
−55 to
+150
39
6.0
W
A
W
A
W
A
A
°C
A
V/ns
Single Pulse Drain−to−Source Avalanche Energy
E_AS
92.4 mJ
(T_J = 25°C, V_DD = 50 V, V_GS = 10 V,
I_L = 43 A_pk, L = 0.1 mH, R_G = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T_L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2009
1
October, 2009 − Rev. 0
http://onsemi.com
V_(BR)DSS
30 V
R_DS(on) MAX
4.0 mW @ 10 V
5.5 mW @ 4.5 V
I_D MAX
79 A
N−Channel MOSFET
D (5−8)
G (4)
1
WDFN8
(m8FL)
CASE 511AB
S (1,2,3)
MARKING DIAGRAM
1
S
D
S
4932
D
S AYWWG D
G
G
D
4932
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
NTTFS4932NTAG WDFN8 1500/Tape & Reel
(Pb−Free)
NTTFS4932NTWG WDFN8 5000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTTFS4932N/D