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NTTFS4824N Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET 30 V, 69 A, Single N−Channel, u8FL | |||
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NTTFS4824N
Power MOSFET
30 V, 69 A, Single NâChannel, m8FL
Features
⢠Small Footprint (3.3 x 3.3 mm) for Compact Design
⢠Low RDS(on) to Minimize Conduction Losses
⢠Low Capacitance to Minimize Driver Losses
⢠This is a PbâFree Device
Applications
⢠DCâDC Converters
⢠Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
GateâtoâSource Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation RqJA
(Note 1)
VDSS
30
V
VGS
±20 V
TA = 25°C
ID
14.9 A
TA = 85°C
10.8
TA = 25°C
PD
2.2 W
Continuous Drain
Current RqJA ⤠10 s
(Note 1)
TA = 25°C
ID
TA = 85°C
20.6 A
14.9
Power Dissipation
RqJA ⤠10 s (Note 1)
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TC = 25°C
TC = 85°C
Power Dissipation
RqJA (Note 2)
TC = 25°C
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
TC = 85°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Current Limited by Pkg.
TA = 25°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source DV/DT
PD
ID
PD
ID
PD
IDM
IDmaxPkg
TJ,
Tstg
IS
dV/dt
4.1
8.3
6.0
0.66
69
50
46.3
207
90
â55 to
+150
46.3
6.0
W
A
W
A
W
A
A
°C
A
V/ns
Single Pulse DrainâtoâSource Avalanche Energy EAS
(TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 38 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
TL
(1/8â³ from case for 10 s)
72 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfaceâmounted on FR4 board using 1 sqâin pad, 1 oz Cu.
2. Surfaceâmounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
5.0 mW @ 10 V
7.5 mW @ 4.5 V
ID MAX
69 A
NâChannel MOSFET
D (5â8)
G (4)
S (1,2,3)
1
WDFN8
(m8FL)
CASE 511AB
FLAT LEAD
MARKING DIAGRAM
1
S
D
S
4824
D
S AYWWG D
G
G
D
4824
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbâFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shippingâ
NTTFS4824NTAG WDFN8 1500/Tape & Reel
(PbâFree)
NTTFS4824NTWG WDFN8 5000/Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
June, 2009 â Rev. 2
Publication Order Number:
NTTFS4824N/D
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