NTTFS4821N Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET 30 V, 57 A, Single N−Channel, u8FL

NTTFS4821N
Power MOSFET
30 V, 57 A, Single N−Channel, m8FL
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• This is a Pb−Free Device
Applications
• DC−DC Converters
• High Side Switching
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R_qJA (Note 1)
Power Dissipation R_qJA
(Note 1)
V_DSS
30
V
V_GS
±20 V
T_A = 25°C
I_D
13.5 A
T_A = 85°C
9.7
T_A = 25°C
P_D
2.1 W
Continuous Drain
Current R_qJA ≤ 10 s
(Note 1)
T_A = 25°C
I_D
T_A = 85°C
18.6 A
13.4
Power Dissipation
R_qJA ≤ 10 s (Note 1)
Continuous Drain
Current R_qJA (Note 2)
Steady
State
T_A = 25°C
T_C = 25°C
T_C = 85°C
Power Dissipation
R_qJA (Note 2)
T_C = 25°C
Continuous Drain
Current R_qJC (Note 1)
T_C = 25°C
T_C = 85°C
Power Dissipation
R_qJC (Note 1)
T_C = 25°C
Pulsed Drain Current
T_A = 25°C, t_p = 10 ms
Current Limited by Pkg.
T_A = 25°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source DV/DT
P_D
I_D
P_D
I_D
P_D
I_DM
I_DmaxPkg
T_J,
T_stg
I_S
dV/dt
4.1
7.5
5.4
0.66
57
41
38.5
171
90
−55 to
+150
38.5
6.0
W
A
W
A
W
A
A
°C
A
V/ns
Single Pulse Drain−to−Source Avalanche Energy E_AS
(T_J = 25°C, V_DD = 50 V, V_GS = 10 V,
I_L = 33 A_pk, L = 0.1 mH, R_G = 25 W)
Lead Temperature for Soldering Purposes
T_L
(1/8″ from case for 10 s)
55 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V_(BR)DSS
30 V
R_DS(on) MAX
7.0 mW @ 10 V
10.8 mW @ 4.5 V
I_D MAX
57 A
N−Channel MOSFET
D (5−8)
G (4)
S (1,2,3)
1
WDFN8
(m8FL)
CASE 511AB
FLAT LEAD
MARKING DIAGRAM
1
S
D
S
4821
D
S AYWWG D
G
G
D
4821
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
NTTFS4821NTAG WDFN8 1500/Tape & Reel
(Pb−Free)
NTTFS4821NTWG WDFN8 5000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
June, 2009 − Rev. 3
Publication Order Number:
NTTFS4821N/D