NTTFS3A08P Datasheet, PDF (1/3 Pages) ON Semiconductor – Power MOSFET .20 V, .14 A, Single P.Channel, 8FL

NTTFS3A08P
Product Preview
Power MOSFET
−20 V, −14 A, Single P−Channel, m8FL
Features
• Ultra Low R_DS(on) to Minimize Conduction Losses
• m8FL 3.3 x 3.3 x 0.8 mm for Space Saving and Excellent Thermal
Conduction
• ESD Protection Level of 5 kV per JESD22−A114
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Battery/Switch
• High Side Load Switch
• Optimized for Power Management Applications for Portable
Products such as Media Tablets, Ultrabook PCs and Cellphones
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R_qJA (Note 1)
Power Dissipation R_qJA
(Note 1)
T_A = 25°C
T_A = 85°C
T_A = 25°C
V_DSS
V_GS
I_D
P_D
20
V
±8
V
−14 A
−10
2.2 W
Continuous Drain
T_A = 25°C
I_D
Current R_qJA ≤ 10 s
(Note 1)
Steady TA = 85°C
Power Dissipation
State
T_A = 25°C
P_D
R_qJA ≤ 10 s (Note 1)
−20 A
−15
4.5 W
Continuous Drain
Current R_qJA (Note 2)
Power Dissipation
R_qJA (Note 2)
T_A = 25°C
I_D
T_A = 85°C
T_A = 25°C
P_D
−9
A
−6
0.84 W
Pulsed Drain Current
T_A = 25°C, t_p = 10 ms
I_DM
−43 A
Operating Junction and Storage Temperature
T_J,
−55 to °C
T_stg
+150
ESD (HBM, JESD22−A114)
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
V_ESD
I_S
T_L
5000 V
−6
A
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
V_(BR)DSS
−20 V
R_DS(on) MAX
6.7 mW @ −4.5 V
9.0 mW @ −2.5 V
I_D MAX
−14 A
P−Channel MOSFET
G
D
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
S
D
S
XXXX
D
S AYWWG D
G
G
D
XXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
NTTFS3A08PTAG WDFN8 1500 / Tape &
(Pb−Free)
Reel
NTTFS3A08PTWG WDFN8 1500 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
1
June, 2012 − Rev. P0
Publication Order Number:
NTTFS3A08P/D