NTTD4401F_07 Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET and Schottky Diode

NTTD4401F
FETKYt Power MOSFET
and Schottky Diode
−20 V, −3.3 A P−Channel with 20 V,
1.0 A Schottky Diode, Micro8t Package
The FETKY product family incorporates low R_DS(on), true logic level
MOSFETs packaged with industry leading, low forward drop, low
leakage Schottky Barrier Diodes to offer high efficiency components in
a space saving configuration. Independent pinouts for TMOS and
Schottky die allow the flexibility to use a single component for
switching and rectification functions in a wide variety of applications.
Features
• Low V_F and Low Leakage Schottky Diode
• Lower Component Placement and Inventory Costs along with Board
Space Savings
• Logic Level Gate Drive – Can be Driven by Logic ICs
• Pb−Free Package is Available
Applications
• Buck Converter
• Synchronous Rectification
• Low Voltage Motor Control
• Load Management in Battery Packs, Chargers, Cell Phones, and
other Portable Products
MOSFET MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
V_DSS
−20
V
V_GS
−10
V
T_A = 25°C
I_D
3.3
A
T_A = 100°C
2.1
Power Dissipation Steady T_A = 25°C
P_D
(Note 1)
State
1.42
W
Continuous Drain
Current (Note 2)
T_A = 25°C
I_D
T_A = 100°C
Power Dissipation Steady T_A = 25°C
P_D
(Note 2)
State
2.4
A
1.5
0.78
W
Pulsed Drain
Current
t = 10 ms
I_DM
10
A
Operating Junction and
Storage Temperature
T_J, T_STG −55 to
°C
150
Single Pulse Drain−to−Source Avalanche
Energy Starting T_A = 25°C (t v 10 s)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
EAS
T_L
150
mJ
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.172 in sq).
http://onsemi.com
MOSFET PRODUCT SUMMARY
V_(BR)DSS
−20 V
R_DS(on) Typ
70 mW @ −4.5 V
100 mW @ −2.7 V
I_D Max
−3.3 A
−2.7 A
SCHOTTKY DIODE SUMMARY
V_R Max
I_F Max
V_F Max
20 V
2.0 A
600 mV @ I_F = 2.0 A
S
A
G
D
P−Channel MOSFET
C
Schottky Diode
MARKING DIAGRAM &
PIN ASSIGNMENT
C CD D
8
8
1
Micro8
CASE 846A
WW
BG G
G
1
A ASG
BG = Specific Device Code
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
NTTD4401FR2
Micro8 4000/Tape & Reel
NTTD4401FR2G ^Micro8 4000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2007
1
January, 2007 − Rev. 5
Publication Order Number:
NTTD4401F/D