NTTD1P02R2_06 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET -1.45 Amps, -20 Volts

NTTD1P02R2
Power MOSFET
−1.45 Amps, −20 Volts
P−Channel Enhancement Mode
Dual Micro8t Package
Features
• Ultra Low R_DS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature Dual Micro8 Surface Mount Package
• Diode Exhibits High Speed, Soft Recovery
• Micro8 Mounting Information Provided
• Pb−Free Package is Available
Applications
• Power Management in Portable and Battery−Powered Products,
i.e.: Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T_A = 25°C
Continuous Drain Current @ T_A = 25°C
Continuous Drain Current @ T_A = 70°C
Pulsed Drain Current (Note 3)
Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T_A = 25°C
Continuous Drain Current @ T_A = 25°C
Continuous Drain Current @ T_A = 70°C
Pulsed Drain Current (Note 3)
Operating and Storage
Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = −20 Vdc, V_GS = −4.5 Vdc,
Peak I_L = −3.5 Apk, L = 5.6 mH,
R_G = 25 W)
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
V_DSS
V_GS
R_qJA
P_D
I_D
I_D
I_DM
R_qJA
P_D
I_D
I_D
I_DM
T_J, T_stg
EAS
T_L
−20
V
"8.0
V
250
0.50
−1.45
−1.15
−10
°C/W
W
A
A
A
125
1.0
−2.04
−1.64
−16
−55 to
+150
35
°C/W
W
A
A
A
°C
mJ
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR−4 or G−10 PCB, Steady State.
2. Mounted onto a 2” square FR−4 Board
(1 in sq, 2 oz Cu 0.06″ thick single sided), Steady State.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
http://onsemi.com
−1.45 AMPERES
−20 VOLTS
160 mW @ V_GS = −4.5
Dual P−Channel
D
G
S
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 D1 D2 D2
8
8
1
Micro8
CASE 846A
STYLE 2
WW
BCG
G
1
S1 G1 S2 G2
BC
= Specific Device Code
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
NTTD1P02R2
Micro8 4000/Tape & Reel
NTTD1P02R2G Micro8 4000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 2
Publication Order Number:
NTTD1P02R2/D