NTS2101P Datasheet, PDF (1/5 Pages) ON Semiconductor – Power MOSFET −8.0 V, −1.4 A, Single P−Channel, SC−70

NTS2101P
Power MOSFET
−8.0 V, −1.4 A, Single P−Channel, SC−70
Features
• Leading Trench Technology for Low R_DS(on) Extending Battery Life
• −1.8 V Rated for Low Voltage Gate Drive
• SC−70 Surface Mount for Small Footprint (2 x 2 mm)
• Pb−Free Package is Available
Applications
• High Side Load Switch
• Charging Circuit
• Single Cell Battery Applications such as Cell Phones,
Digital Cameras, PDAs, etc.
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source Voltage
V_DSS
−8.0
V
Gate−to−Source Voltage
V_GS
±8.0
V
Continuous Drain
Current (Note 1)
Steady T_A = 25°C
I_D
State
T_A = 70°C
−1.4
A
−1.1
t ≤ 5 s T_A = 25°C
−1.5
A
Power Dissipation
(Note 1)
Steady T_A = 25°C P_D
State
0.29 W
t ≤5 s
0.33 W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode), Continuous
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_DM
−3.0
A
T_J,
−55 to °C
T_STG
150
I_S
−0.46 A
T_L
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Units
Junction−to−Ambient – Steady State (Note 1) R_qJA
430 °C/W
Junction−to−Ambient − t ≤ 5 s (Note 1)
R_qJA
375
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
http://onsemi.com
V_(BR)DSS
−8.0 V
R_DS(on) Typ
65 mW @ −4.5 V
78 mW @ −2.5 V
117 mW @ −1.8 V
I_D Max
−1.4 A
P−Channel MOSFET
S
G
D
3
1
2
SC−70/SOT−323
CASE 419
STYLE 8
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain
3
TS M G
G
1
2
Gate Source
TS
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
NTS2101PT1 SOT−323 3000/Tape & Reel
NTS2101PT1G
SOT−323
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 1
Publication Order Number:
NTS2101P/D