NTR4518N Datasheet, PDF (1/6 Pages) ON Semiconductor – Single N−Channel Power MOSFET

NTR4518N
Power MOSFET
30 V, 2.5 A, Single N−Channel, SOT−23
Features
• Leading Planar Technology for Low Gate Charge / Fast Switching
• 4.5 V Rated for Low Voltage Gate Drive
• SOT−23 Surface Mount for Small Footprint (3 x 3 mm)
• This is a Pb−Free Device
Applications
• DC−DC Conversion
• Load/Power Switch for Portables
• Load/Power Switch for Computing
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
30
V
Gate−to−Source Voltage
V_GS
±20
V
Continuous Drain
Current (Note 1)
Steady T_A = 25°C
I_D
State
T_A = 85°C
2.0
A
1.5
t ≤ 10 s T_A = 25°C
2.5
Power Dissipation
(Note 1)
Steady T_A = 25°C P_D
State
0.73 W
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady T_A = 25°C
I_D
State
T_A = 85°C
T_A = 25°C
P_D
1.5
A
1.1
0.42 W
Pulsed Drain Current
ESD Capability (Note 3)
t_p = 10 ms
C = 100 pF,
RS = 1500 W
I_DM
6.0
A
ESD
125
V
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T_J,
−55 to °C
T_stg
150
I_S
2.0
A
T_L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
This document contains information on a product under development.
ON Semiconductor reserves the right to change or discontinue this
product without notice.
This document, and the information contained herein, is CONFIDENTIAL AND
PROPRIETARY and the property of Semiconductor Components Industries,
LLC., dba ON Semiconductor. It shall not be used, published, disclosed or
disseminated outside of the Company, in whole or in part, without the written
permission of ON Semiconductor. Reverse engineering of any or all of the
information contained herein is strictly prohibited.
E 2006, SCILLC. All Rights Reserved.
http://onsemi.com
V_(BR)DSS
30 V
R_DS(on) TYP
85 mW @ 10 V
105 mW @ 4.5 V
I_D MAX
2.5 A
N−Channel
D
G
S
3
1
2
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
Drain
3
TR3 M G
G
1
Gate
2
Source
TR3 = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
NTR4518NT1G SOT−23 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
November, 2006 − Rev. 0
Publication Order Number:
NTR4518N/D