NTR3A085PZ Datasheet, PDF (1/3 Pages) ON Semiconductor – Power MOSFET Dual P−Channel Micro8

NTR3A085PZ
Advance Information
Power MOSFET
−20 V, −2.7 A, Single P−Channel
SOT−23 Package
Features
• Leading −20 V Trench for Low R_DS(on)
• −1.8 V Rated for Low Voltage Gate Drive
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Power Load Switch
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
−20
V
Gate−to−Source Voltage
V_GS
±8
V
Continuous Drain Cur-
Steady T_A = 25°C
I_D
rent (Note 1)
State
T_A = 85°C
−2.5 A
−1.8
t ≤ 10 s T_A = 25°C
−2.7
Power Dissipation
(Note 1)
Steady T_A = 25°C P_D
State
0.72 W
t ≤ 10 s
0.81
Continuous Drain Cur-
rent (Note 2)
Power Dissipation
(Note 2)
Steady T_A = 25°C
I_D
State
T_A = 85°C
T_A = 25°C P_D
−1.9 A
−1.4
0.42 W
Pulsed Drain Current
t_p = 10 ms
ESD HBM, JESD22−A114 (Note 3)
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
I_DM
−10
A
V_ESD
1000
V
T_J, −55 to °C
T_STG
150
I_S
−1.1 A
T_L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
R_qJA
175 °C/W
Junction−to−Ambient – t ≤ 10 s (Note 1)
R_qJA
155
Junction−to−Ambient – Steady State (Note 2)
R_qJA
301 °C/W
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 727 mm sq., 1 oz).
2. Surface−mounted on FR4 board using minimum pad size
(Cu area = 3.8 mm sq., 1 oz).
3. ESD Rating: HBM Class 1C
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
www.onsemi.com
V_(BR)DSS
−20 V
R_DS(on) Max
77 mW @ −4.5 V
105 mW @ −2.5 V
160 mW @ −1.8 V
I_D MAX
−2.7 A
P−Channel MOSFET
D3
G
1
S2
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain
3
SOT−23
CASE 318
STYLE 21
TRG MG
G
1
Gate
2
Source
TRG
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
NTR3A085PZT1G SOT−23 3000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
1
December, 2015 − Rev. P0
Publication Order Number:
NTR3A085PZ/D