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NTR1P02T1 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET(−20 V, −1 A, P−Channel SOT−23 Package)
NTR1P02T1
Power MOSFET
−20 V, −1 A, P−Channel SOT−23 Package
Features
• Ultra Low On−Resistance Provides Higher Efficiency
and Extends Battery Life
RDS(on) = 0.180 W, VGS = −10 V
RDS(on) = 0.280 W, VGS = −4.5 V
• Power Management in Portable and Battery−Powered Products
• Miniature SOT−23 Surface Mount Package Saves Board Space
• Mounting Information for SOT−23 Package Provided
Applications
• DC−DC Converters
• Computers
• Printers
• PCMCIA Cards
• Cellular and Cordless Telephones
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp ≤ 1 ms)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range
VDSS
VGS
ID
IDM
PD
TJ, Tstg
−20
V
±20
V
A
−1.0
−2.67
400 mW
− 55 to °C
150
Thermal Resistance − Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, (1/8″ from case for 10 s)
RqJA
TL
300 °C/W
260
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
V(BR)DSS
−20 V
RDS(on) TYP
148 mW @ −10 V
ID MAX
−1.0 A
P−Channel
D
G
S
3
1
2
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
3
Drain
P2
1
Gate
2
Source
P2 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
NTR1P02T1
SOT−23 3000/Tape & Reel
NTR1P02T3
SOT−23 10,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
1
March, 2005 − Rev. 4
Publication Order Number:
NTR1P02T1/D