NTP8G202N Datasheet, PDF (1/6 Pages) ON Semiconductor – Power GaN Cascode Transistor

NTP8G202N
Power GaN Cascode
Transistor 600 V, 290 mW
Features
• Fast Switching
• Extremely Low Q_rr
• Transphorm Inside
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol NDD Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R_qJC
Power Dissipation –
R_qJC
Pulsed Drain
Current
Steady
State
Steady
State
T_C = 25°C
T_C = 100°C
T_C = 25°C
t_p = 10 ms
V_DSS
V_GS
I_D
P_D
I_DM
600
V
±18
V
9.0
A
6.0
65
W
35
A
Operating Junction and Storage
Temperature
T_J,
T_STG
−55 to °C
+150
Lead Temperature for Soldering Leads
T_L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient Steady State
Symbol
R_qJC
R_qJA
Value
2.3
62
Unit
°C/W
°C/W
www.onsemi.com
V_(BR)DSS
600 V
R_DS(ON) TYP
290 mW @ 10 V
N−Channel MOSFET
D (3)
G (1)
4
S (2,4)
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Source
1
2
3
TO−220
CASE 221A−09 ^NTP8G202NG
STYLE 10
AYWW
1
Gate
3
Drain
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
2
Source
ORDERING INFORMATION
Device
Package
Shipping
NTP8G202NG
TO−220
(Pb−Free)
50 Units / Rail
© Semiconductor Components Industries, LLC, 2015
1
May, 2015 − Rev. 1
Publication Order Number:
NTP8G202N/D