NTP85N03 Datasheet, PDF (1/12 Pages) ON Semiconductor – Power MOSFET 85 Amps, 28 Volts

NTP85N03, NTB85N03
Power MOSFET
85 Amps, 28 Volts
N−Channel TO−220 and D²PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
− Continuous
Drain Current
− Continuous @ T_C = 25°C
− Single Pulse (t_p = 10 ms)
Total Power Dissipation @ T_C = 25°C
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 28 Vdc, V_GS = 10 Vdc, L = 5.0 mH,
I_L(pk) = 17 A, RG = 25 W)
V_DSS
28
V_GS
"20
I_D
I_DM
P_D
T_J, T_stg
E_AS
85*
190
80
0.66
− 55
to
+150
733
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
R_qJC
R_qJA
1.55
70
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T_L
260
1. When surface mounted to an FR4 board using 1″ pad size,
(Cu Area 1.127 in²).
*Chip current capability limited by package.
Unit
Vdc
Vdc
Adc
Apk
W
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
85 AMPERES
28 VOLTS
R_DS(on) = 6.1 mW (Typ.)
N−Channel
D
G
4
S
4
12
3
1
2
3
TO−220AB
CASE 221A
Style 5
D²PAK
CASE 418AA
Style 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTx85N03
LLYWW
1
Gate
3
Source
NTx85N03
LLYWW
1
Gate
2
3
Drain ^Source
2
Drain
NTx85N03
x
LL
Y
WW
= Device Code
= P or B
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP85N03
NTB85N03
TO−220AB
D²PAK
50 Units/Rail
50 Units/Rail
NTB85N03T4
D²PAK
800/Tape & Reel
© Semiconductor Components Industries, LLC, 2003
1
October, 2003 − Rev. 1
Publication Order Number:
NTP85N03/D