NTP75N06L Datasheet, PDF (1/8 Pages) ON Semiconductor – POWER MOSFET 75 AMPS, 60 VOLTS, LOGIC LEVEL

NTP75N06L, NTB75N06L
Power MOSFET
75 Amps, 60 Volts, Logic Level
N–Channel TO–220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 10 MΩ)
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tpv10 ms)
Drain Current
– Continuous @ TA = 25°C
– Continuous @ TA = 100°C
– Single Pulse (tpv10 µs)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1.)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
ID
ID
IDM
PD
TJ, Tstg
60
60
"20
"15
75
50
225
214
1.4
2.4
–55 to
+175
Vdc
Vdc
Vdc
Adc
Apk
W
W/°C
W
°C
Single Pulse Drain–to–Source Avalanche
EAS
844
mJ
Energy – Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 5.0 Vdc, L = 0.3 mH
IL(pk) = 75 A, VDS = 60 Vdc)
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient (Note 1.)
R_θJC
R_θJA
°C/W
0.7
62.5
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
260 °C
1. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in2).
http://onsemi.com
75 AMPERES
60 VOLTS
RDS(on) = 11 mΩ
N–Channel
D
G
4
S
4
12
1
2
3
TO–220AB
CASE 221A
STYLE 5
3
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTP75N06L
LLYWW
1
Gate
3
Source
NTB75N06L
LLYWW
1
Gate
2
3
Drain _Source
2
Drain
NTx75N06L = Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP75N06L
NTB75N06L
NTB75N06LT4
TO–220AB
D2PAK
D2PAK
50 Units/Rail
50 Units/Rail
800/Tape & Reel
© Semiconductor Components Industries, LLC, 2001
1
April, 2001 – Rev. 0
Publication Order Number:
NTP75N06L/D