NTP75N03-06 Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET 75 Amps, 30 Volts N−Channel TO−220 and D2PAK

NTP75N03−06,
NTB75N03−06
Power MOSFET
75 Amps, 30 Volts
N−Channel TO−220 and D²PAK
This 20 V_GS gate drive vertical Power MOSFET is a general
purpose part that provides the “best of design” available today in a low
cost power package. This power MOSFET is designed to withstand
high energy in the avalanche and commutation modes. The
Drain−to−Source Diode has a fast response with soft recovery.
Features
• Ultra−Low R_DS(on), Single Base, Advanced Technology
• SPICE Parameters Available
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperatures
• High Avalanche Energy Capability
• ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0
Typical Applications
• Power Supplies
• Inductive Loads
• PWM Motor Controls
• Replaces MTP1306 and MTB1306
N−Channel
D
G
S
http://onsemi.com
V_(BR)DSS
30 A
R_DS(on) TYP
5.3 mW @ 10 V
I_D MAX
75 A
4
4
1
2
3
TO−220AB
CASE 221A
Style 5
2
1
3
D²PAK
CASE 418AA
Style 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
75
N03−06
YWW
1
Gate
3
Source
75
N03−06
YWW
1
Gate
2
Drain
3
Source
2
Drain
75N03−06
Y
WW
= Device Code
= Year
= Work Week
© Semiconductor Components Industries, LLC, 2003
December, 2003 − Rev. 4
ORDERING INFORMATION
Device
Package
Shipping^†
NTP75N03−06
NTB75N03−06
NTB75N03−06T4
TO−220
D²PAK
D²PAK
50 Units/Rail
50 Units/Rail
800/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
Publication Order Number:
NTP75N03−06/D