NTP65N02R Datasheet, PDF (1/4 Pages) ON Semiconductor – Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK

NTB65N02R, NTP65N02R
Product Preview
Power MOSFET
65 A, 24 V N-Channel
TO-220, D²PAK
Features
• Planar HD3e Process for Fast Switching Performance
• Low R_DSon to Minimize Conduction Loss
• Low C_iss to Minimize Driver Loss
• Low Gate Charge
• Fast Switching
MAXIMUM RATINGS (T_J = 25°C Unless otherwise specified)
Parameter
Symbol Value Unit
Drain–to–Source Voltage
Gate–to–Source Voltage
Continuous
Drain Current (Continuous @ T_A = 25°C (Note 3)
Single Pulse (tp = 10 ms)
Total Power Dissipation @ T_A = 25°C
Operating and Storage Temperature
Single Pulse Drain–to Source Avalanche
Energy – Starting T_J=25°C
(V_DD = 50 V_dc, V_GS = 5 V_dc, I_L = A_pk, L = 1 mH,
R_G = 25 W)
Thermal Resistance
Junction–to–Case
Junction–to–Ambient (Note 1)
Junction–to–Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8” from Case for 10 Seconds
V_DSS
V_GS
I_D
I_DM
P_D
T_J and
T_stg
E_AS
R_qJC
R_qJA
R_qJA
T_L
24
V_dc
±20 V_dc
65
A
160 A
78
W
–55 to °C
150
TBD mJ
1.6 °C/W
67
120
260 °C
1. When surface mounted to an FR4 board using 1 inch pad size, (Cu Area
1.127 in²).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in²).
3. Chip current capability limited by package.
PIN ASSIGNMENT
PIN
FUNCTION
1
Gate
2
Drain
3
Source
4
Drain
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
65 A, 24 V
R_DS(on) = 8.3 mW (TYP)
D
G
S
MARKING
DIAGRAMS
4 ^{TO–220AB}
CASE 221A
Style 5
xxxxx
YWW
123
4 ^D2PAK
xxxxx
CASE 418B
YWW
2
Style 2
13
xxxxx
Y
WW
= Specific Device Code
= Year
= Work Week
ORDERING INFORMATION
Device
NTB65N02R
NTB65N02RT4
NTP65N02R
Package
D²PAK
D²PAK
TO–220AB
Shipping
50 Units/Rail
800 Tape & Reel
50 Units/Rail
© Semiconductor Components Industries, LLC, 2002
1
October, 2002 – Rev. 0
Publication Order Number:
NTB65N02R/D