NTP5864NG Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET 60 V, 63 A, 12.4 mOhm

NTP5864N
Power MOSFET
60 V, 63 A, 12.4 mW
Features
• Low R_DS(on)
• High Current Capability
• Avalanche Energy Specified
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage −
Non−Repetitive (t_p = 10 ms)
Continuous Drain
Steady ^TC ^{= 25°C}
Current − R_qJC (Note 1) _{State TC = 100°C}
Power Dissipation −
R_qJC (Note 1)
Steady ^TC ^{= 25°C}
State _{TC = 100°C}
Pulsed Drain Current
t_p = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode) Pulsed
Single Pulse Drain−to Source Avalanche
Energy − (L = 0.1 mH)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
V_DSS
V_GS
V_GS
I_D
P_D
I_DM
T_J,
T_STG
I_S
EAS
IAS
T_L
60
V
±20
V
±30
V
63
A
45
107
W
54
252
A
−55 to _°C
175
63
A
80
mJ
40
A
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Units
Junction−to−Case (Drain) − Steady State
(Note 1)
R_θJC
1.4 °C/W
Junction−to−Ambient − Steady State (Note 1)
R_θJA
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces).
33 °C/W
http://onsemi.com
V_(BR)DSS
60 V
R_DS(ON) MAX
12.4 mΩ @ 10 V
I_D MAX
(Note 1)
63 A
N−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
4
Drain
TO−220AB
CASE 221A
STYLE 5
NTP5864NG
AYWW
1
2
3
A
Y
WW
G
1
Gate
= Assembly Location
= Year
= Work Week
= Pb−Free Package
2
Drain
3
Source
ORDERING INFORMATION
Device
Package
Shipping
NTP5864NG
TO−220
(Pb−Free)
50 Units / Rail
© Semiconductor Components Industries, LLC, 2011
1
June, 2011 − Rev. 0
Publication Order Number:
NTP5864N/D